A three-dimensional conjugate model with realistic boundary conditions for flow and heat transfer in an industry scale hydrothermal autoclave

Li, Hongmin; Evans, Edward A.; Wang, Guoxiang

doi:10.1016/j.ijheatmasstransfer.2005.07.015

Cited by 12 publications

(9 citation statements)

References 7 publications

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“…In practice, another relevant lack of axial symmetry may arise from the imprecise alignment of the axis of the thermal field of the furnace and the axis of the autoclave. Such alignment issues have been studied for hydrothermal growth by Li et al who studied an industrial-scale autoclave [84]. Based on measured temperature deviations of around 2 K, Li et al estimated the heat flux on the outer autoclave wall to vary by as much as 10% [84].…”

Section: Resultsmentioning

confidence: 99%

“…Such alignment issues have been studied for hydrothermal growth by Li et al who studied an industrial-scale autoclave [84]. Based on measured temperature deviations of around 2 K, Li et al estimated the heat flux on the outer autoclave wall to vary by as much as 10% [84]. Li et al conclude that the circumferential temperature variations in an industrial hydrothermal growth reactor are sufficient to establish an asymmetric flow [84]; however, they do not report whether the flow in a 3D model with symmetric boundary conditions and axial symmetry is symmetric or not.…”

Section: Resultsmentioning

confidence: 99%

“…They note that their predicted transport-limited growth rates are in the order of hundreds of microns per hour, whereas experimentally observed growth rates are in the order of hundreds of microns per day, and ascribe this deviation to neglecting dissolution and growth kinetics [30]. The fact that the grown crystals usually show formation of facets [20,84,85] and the observation that nutrient loss mass flux does not covary with seed mass flux [47] both imply that seeded GaN growth is likely surface-reaction-limited in state-of-the-art c,f) have been obtained using wall temperature distributions extracted from a global field simulation including the furnace and its surroundings with a simulation domain limited to the autoclave. In all cases, three seed crystals and a ring-shaped baffle were considered in an axisymmetric 2D simulation.…”

Section: Simulations Of the Gan Crystal Growth Processmentioning

confidence: 99%

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Numerical Simulation of Ammonothermal Crystal Growth of GaN—Current State, Challenges, and Prospects

et al. 2021

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Numerical simulations are a valuable tool for the design and optimization of crystal growth processes because experimental investigations are expensive and access to internal parameters is limited. These technical limitations are particularly large for ammonothermal growth of bulk GaN, an important semiconductor material. This review presents an overview of the literature on simulations targeting ammonothermal growth of GaN. Approaches for validation are also reviewed, and an overview of available methods and data is given. Fluid flow is likely in the transitional range between laminar and turbulent; however, the time-averaged flow patterns likely tend to be stable. Thermal boundary conditions both in experimental and numerical research deserve more detailed evaluation, especially when designing numerical or physical models of the ammonothermal growth system. A key source of uncertainty for calculations is fluid properties under the specific conditions. This originates from their importance not only in numerical simulations but also in designing similar physical model systems and in guiding the selection of the flow model. Due to the various sources of uncertainty, a closer integration of numerical modeling, physical modeling, and the use of measurements under ammonothermal process conditions appear to be necessary for developing numerical models of defined accuracy.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Simulations Of the Gan Crystal Growth Processmentioning

confidence: 99%

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Numerical Simulation of Ammonothermal Crystal Growth of GaN—Current State, Challenges, and Prospects

et al. 2021

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“…More recently, Babaei and Chen [13] revisited the same problem of a finite-length thermo-piezoelectric rod under a moving heat source. Other researchers have also done a lot of works on similar issues [14][15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

The transient response of a functionally graded piezoelectric rod subjected to a moving heat source under fractional order theory of thermoelasticity

2016

Mechanics of Advanced Materials and Structures

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The transient thermopiezoelectric response of a functionally graded piezoelectric rod subjected to a moving heat source is investigated in the context of fractional order theory of thermoelasticity proposed by Sherief. The material properties of the functionally graded piezoelectric rod are assumed to vary exponentially along the length except the thermal relaxation time and the specific heat, which are taken to be constant. To solve the governing equations of the problem, Laplace transform is applied to eliminating the time effect and the analytical solutions of the displacement, stress, temperature and electric field in Laplace domain are obtained. Subsequently, the solutions of the considered variables in time domain are obtained by numerical Laplace inversion and illustrated graphically. In calculation, the effect of the fractional order parameter on the variations of the considered variables is presented.

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“…Li et al [2][3][4] have also given calculations for a hydrothermal crystalgrowth process when a circumferential temperature profile exists and when the open-space ratio of the baffle and the hole geometry are changed [5,6]. Chen et al [7,8] have given calculations for the ammonothermal GaN single-crystal growth process when the raw-material zone is under the baffle and over the baffle.…”

Section: Introductionmentioning

confidence: 99%

Numerical simulation of natural convection heat transfer in a ZnO single-crystal growth hydrothermal autoclave—Effects of fluid properties

Masuda

Suzuki

Mikawa

et al. 2009

Journal of Crystal Growth

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A three-dimensional conjugate model with realistic boundary conditions for flow and heat transfer in an industry scale hydrothermal autoclave

Cited by 12 publications

References 7 publications

Numerical Simulation of Ammonothermal Crystal Growth of GaN—Current State, Challenges, and Prospects

Numerical Simulation of Ammonothermal Crystal Growth of GaN—Current State, Challenges, and Prospects

The transient response of a functionally graded piezoelectric rod subjected to a moving heat source under fractional order theory of thermoelasticity

Numerical simulation of natural convection heat transfer in a ZnO single-crystal growth hydrothermal autoclave—Effects of fluid properties

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