A thin film diamond p-channel field-effect transistor

Abstract

A depletion-mode metal-insulator-semiconductor field-effect transistor has been fabricated from thin film polycrystalline diamond with a p-type (boron doped) channel and an insulating diamond gate. This device has been successfully operated at 300 °C displaying pinch off when in depletion and high levels of channel current modulation in enhancement. A transconductance value of 174 μS/mm has been measured, the highest reported value to date for this type of device.

Control of carrier concentration and surface flattening of CuGaO2 epitaxial films for a p-channel transparent transistor

“…Electronic circuit technology requires both n-and p-channel active layers because the presence of both active layers makes circuit design more flexible and enables low power-consumption circuits similar to complementary metal-oxide-semiconductor (CMOS) technology to be developed. Transparent thin-film transistors (TTFTs) have been developed on the basis of wide-gap semiconductors such as GaN [1], SiC [2], and diamond [3]. TTFTs exhibit good performances and durability at high-temperatures and highpower operations.…”

Growth, structure and carrier transport properties of Ga2O3 epitaxial film examined for transparent field-effect transistor

“…So far, transparent (in the visible region) FETs have been reported using SiC [4], diamond [5], GaN [6], and oxides such as InGaO(ZnO) 5 , ZnO and SnO 2 [7][8][9][10] as active layers. However, these materials except for diamond are opaque in the DUV region because the bandgap energies are smaller than 4 eV.…”

A Critical Review of Chemical Vapor-Deposited (CVD) Diamond for Electronic Applications

“…Steady advances in PECVD have resulted in the realization of high-quality, polycrystalline diamond films for device applications. Thus, diamond-based microelectronic devices, such as Schottky diodes and FETs, 138,147,148,192 have been fabricated for high-temperature (T>500°C) applications. Likewise, microelectronic gas sensors based on CVD diamond can operate at considerably higher temperatures with a wider dynamic range and more sensitivity than those based on silicon technology.…”