A thermodynamic evaluation of the Au-Ge and Au-Si systems

Chevalier, Pierre-Yves

doi:10.1016/0040-6031(89)87056-x

Cited by 47 publications

(55 citation statements)

References 19 publications

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“…The Si-Au phase diagram has been assessed by Elliot and Shunk, [59] Chevalier, [60] and Okamoto and Massalski. [61] According to the latter work, this system contains a eutectic reaction with the eutectic coordinates T = 633 K (360°C) and X Si = 0.197.…”

Section: F Si-zn Systemmentioning

confidence: 99%

Liquidus of Silicon Binary Systems

Safarian

Kolbeinsen

Tangstad

2011

Metall Mater Trans B

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Thermodynamic knowledge about liquid silicon is crucial for the production of solar-grade silicon feedstock from molten silicon. In the current study, liquidus for silicon binary alloys is formulated using a previously developed method in which the liquidus curve is calculated using two constants. The liquidus measurements for the silicon portion of the silicon alloys with Al, Ca, Mg, Fe, Ti, Zn, Cu, Ag, Au, Pt, Sn, Pb, Bi, Sb, Ga, In, Ni, Pd, Mn, and Rh are reviewed, and the consistent data were used to determine the liquidus constants. The liquidus curves for silicon binary systems are calculated and plotted. It is indicated that the calculated liquidus curves fit well with the experimental data. A correlation between the determined liquidus constants is also observed, which can be used to gain a better understanding of the thermodynamics of the silicon binary melts.

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Section: F Si-zn Systemmentioning

confidence: 99%

Liquidus of Silicon Binary Systems

Safarian

Kolbeinsen

Tangstad

2011

Metall Mater Trans B

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“…The Au-Si system is also characterized of negative deviation of thermodynamic activity from concentration [16,17] (Fig. 1b); heat of mixing is negative.…”

Section: T= 1100°cmentioning

confidence: 99%

The wettability of silicon carbide by Au–Si alloys

Naidich¹,

Журавлев²,

Krasovskaya³

1998

Materials Science and Engineering: A

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“…In the same temperature range, a eutectic point exists in the Au-Ge system (361 1C and 28at% Ge) [9]. The solid solubility of Ge in Au is 3.1at%, whereas that of Au in Ge is very low, o10 À 5 at% [10].…”

Section: Resultsmentioning

confidence: 92%

Microstructural and surface characterization of thin gold films on n-Ge (111)

Nel

Chawanda

Auret

et al. 2009

Physica B: Condensed Matter

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a b s t r a c tThin gold films were fabricated by vacuum resistive deposition on the n-Ge (111) wafers. The films were annealed between 300 and 600 1C. These resulting thin films were then characterised using scanning electron microscopy (field emission and back-scattering modes), Rutherford back scattering spectroscopy and time of flight secondary ion mass spectroscopy (TOF-SIMS). For temperatures below the eutectic temperature the distribution of both the gold and the germanium on the surface are uniform. Above the eutectic temperature, the formation of gold rich islands on the surface of the Germanium were observed. These changes in the microstructure were found to correspond to changes in the electrical characteristics of the diodes.

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A thermodynamic evaluation of the Au-Ge and Au-Si systems

Cited by 47 publications

References 19 publications

Liquidus of Silicon Binary Systems

Liquidus of Silicon Binary Systems

The wettability of silicon carbide by Au–Si alloys

Microstructural and surface characterization of thin gold films on n-Ge (111)

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