A thermocouple-based remote temperature controller of an electrically-floated sample for plasma CVD of nanocarbons with bias voltage

Abstract

We report an accurate and easy-to operate instrument for the temperature control of an electrically-floated sample using a thermocouple in direct contact with it. The signal was transmitted via 2.45 GHz WiFi. We measured and analyzed the discrepancy between the thermocouple and a radiation thermometer for the plasma CVD of carbon nanomaterials under sample bias. A successful protection method from abnormal discharge in the plasma is also provided.

Synthesis of Carbon Nanotubes by Plasma-Enhanced Chemical Vapor Deposition Using Fe1−xMnxO Nanoparticles as Catalysts: How Does the Catalytic Activity of Graphitization Affect the Yields and Morphology?

“…The dispersity of Fe The specially designed PECVD chamber that can directly monitor the temperature under a high bias voltage using a thermocouple was utilized in this study. The detailed geometry of the PECVD chamber was described in the previous report [40]. A SiO 2 (285 nm)/Si wafer was cut into several 1 × 1 cm 2 pieces and cleaned by the RCA method [41], then an Al 2 O 3 layer was deposited by sputtering, if necessary.…”

(Invited) Millisecond Annealing by Atmospheric Pressure Thermal Plasma Jet and Direct Imaging of Temperature Distribution Using Optical Interference Contactless Thermometry (OICT)

“…Temperature measurement of the wafer with a high time resolution is indispensable not only to achieve a precise temperature control and a reproducibility of the annealing process itself, but to control the uniformity of device performances. Infrared radiation thermometers have been proposed to measure silicon wafer temperature (1), however, plasma processing involves various difficulties such as plasma radiation (2). In previous work, the present authors proposed an optical-interference contactless thermometry (OICT) for interferometric temperature measurements with high temporal resolution and the ability to measure a substrate surface temperature from the backside has been demonstrated (3)(4)(5).…”

Development of a real-time temperature measurement technique for SiC wafer during ultra-rapid thermal annealing based on optical-interference contactless thermometry (OICT)

“…However, methods that can be applied to URTA are very limited, especially under a plasma process. Conventionally, contact-type methods, such as thermocouples 2,3) and thermo-labels, 4) need to come into contact with the wafer and are typically pasted to either the backside of the wafer or the wafer chuck. Thus, contact thermal resistance between the wafer and the probe will inevitably affect measurements.…”

“…6,7) IR thermometers [8][9][10][11][12][13][14] have been the primary method for measuring wafer temperature during URTA, in spite of existing problems in plasma processing. 2) More importantly, none of these methods can measure the internal wafer temperature during URTA.…”