A Thermal Model for Carbon Nanotube Interconnects

Mohsin, K. M.; Srivastava, Ashok; Sharma, Ashwani; Mayberry, Clay

doi:10.3390/nano3020229

Cited by 22 publications

(14 citation statements)

References 26 publications

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“…Our previously developed one-dimensional fluid dynamic model has been used to model the basic parameters of metallic SWCNT under study 17 and is described as follows,…”

Section: Resistance Modelingmentioning

confidence: 99%

Metallic single-walled, carbon nanotube temperature sensor with self heating

2014

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A metallic single-walled carbon nanotube (SWCNT) has been proposed as a highly sensitive temperature sensor with consideration of self-heating induced scattering. This sensor can be implemented to sense temperature spanning from 20º C to 400º C with high temperature coefficient of resistivity (TCR) ranging from 0.0035/ºC to 0.009/ ºC. Important aspect of this work is consideration of self-heating in SWCNT which was not considered in earlier carbon nanotube based temperature sensors. We have studied a metallic SWCNT over a silicon dioxide substrate and in between two metal contacts. Bias voltage of 0.1V has been applied in between these two contacts. For resistivity calculation, we have utilized one-dimensional semi-classical transport model assuming SWCNT is perfectly conducting. The heat flow equation has been solved assuming steady state flow of heat. We have also assumed that contact and substrate are in thermal equilibrium with the surroundings. Since self-heating significantly affects electro-thermal transport, incorporation of this phenomenon enables to design and model ambient temperature sensor accurately. We have studied CNT sensor with different lengths and chiralities. The results show that resistances of longest (3µm) and thinnest (9, 0) CNTs increase rapidly with temperature. For a 3µm long metallic SWCNT with chirality index (9, 0), TCR has the maximum value (~0.009/ ºC).

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“…Our previously developed one-dimensional fluid dynamic model has been used to model the basic parameters of metallic SWCNT under study 17 and is described as follows,…”

Section: Resistance Modelingmentioning

confidence: 99%

Metallic single-walled, carbon nanotube temperature sensor with self heating

2014

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“…Pop [17], Yamada et al [18] and Kitsuki et al [19] studied the thermal breakdown and tried to model the breakdown with onedimensional Fourier heat equation in cylindrical coordinate system. In our recent works, we have reported theoretical study of electro-thermal transport in SWCNT and MWCNT interconnects considering Joule heating induced scatterings [20,21]. Since geometry of bundle is unlike the SWCNT and MWCNT it is essential to study the SWCNT bundle to compare the performance of all these CNT variants in regards to thermal stability.…”

Section: Introductionmentioning

confidence: 99%

Characterization of SWCNT Bundle Based VLSI Interconnect with Self-heating Induced Scatterings

Mohsin

Srivastava

2015

Proceedings of the 25th Edition on Great Lakes Symposium on VLSI

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Performance of single walled carbon nanotube (SWCNT) bundle-based VLSI interconnects has been studied under the strong influence of scatterings induced by self-heating. Landauer Büttiker formalism along with Fourier heat transfer equation have been used to compute interconnect scattering parameters at various cross sectional areas of the interconnection. Cross sectional temperature calculation was performed using finite difference method considering temperature dependent thermal conductivity for primitive defect-less SWCNT bundles. Using the relaxation time approximation, we have studied scattering dynamics in calculating equivalent resistance. Electronic and thermal transport equations have been coupled and solved iteratively to get accurate estimation of temperatures and resistances. Study of scattering parameters shows low backscattering however significant transmission loss. Below 100GHz, for a 1µm long interconnect with 10 nm by10 nm cross sectional area shows S 21 as high as 80dB. In terahertz regime transmission parameter S 21 is in the range of few hundreds dB.

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“…Thermal noise emanates due to thermally excited random motion of charge carriers and appears across the resistors [12]. This limits the current density and causes breakdown due to resistive heating [13]. Thermal noise in the presence of crosstalk has been analysed by researchers and reported in [14,15].…”

Section: Introductionmentioning

confidence: 99%

Crosstalk Analysis of Current-Mode Signalling-CoupledRLCInterconnects Using FDTD Technique

Agrawal

Chandel

2015

IETE Technical Review

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In nanometre regimes, interconnect crosstalk noise has serious implications as it affects the signal integrity of the system. An accurate analysis of crosstalk effects is very essential and a critical issue. This paper efficiently models and analyses the crosstalk effects in current-mode signalling (CMS) multiline-coupled-distributed resistance-inductance-capacitance (RLC) interconnects. The interconnects are driven by complementary metal-oxide-semiconductor (CMOS) gates. The nonlinear behaviour of metal-oxide-semiconductor (MOS) transistors in CMOS gate is characterized by an nth power law model. Both inductive and capacitive couplings have been considered to incorporate coupling effects in interconnects. The model is formulated using a finite-difference time-domain (FDTD) technique. The functional and dynamic crosstalk effects have been analysed for different interconnect lengths and varying transition time for the first time in CMS interconnects. The efficacy of CMS interconnects is evaluated by comparison with the conventional voltage-mode signalling (VMS) interconnects. It is analysed that CMS interconnects have lesser crosstalk-induced delay than VMS interconnects. Also, normalized undershoot voltage in CMS interconnects is lesser as compared to VMS signalling interconnects. The results are validated using simulation program with integrated circuit emphasis simulations. The analyses have been carried out for 32 nm technology node.

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A Thermal Model for Carbon Nanotube Interconnects

Cited by 22 publications

References 26 publications

Metallic single-walled, carbon nanotube temperature sensor with self heating

Metallic single-walled, carbon nanotube temperature sensor with self heating

Characterization of SWCNT Bundle Based VLSI Interconnect with Self-heating Induced Scatterings

Crosstalk Analysis of Current-Mode Signalling-CoupledRLCInterconnects Using FDTD Technique

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