2017
DOI: 10.1039/c7ra05474b
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A thermal-induced electric current from a gold electrode/porous silicon device

Abstract: We demonstrate the electric current measured from a device composed of electrochemically etched silicon, porous silicon (PS) and gold (Au) electrodes of different device designs by applying a thermal potential between two Au electrodes.

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“…The etching of Si wafer was done as per protocol by Huang et al with minor modifications [19]. PSi samples were prepared by wet electrochemical etching process at room temperature using p-type, boron-doped one side polished Si wafer in 100 orientation with a thickness of 525 ± 25 µm and resistivity of 1-10 Ω cm.…”
Section: Methodsmentioning
confidence: 99%
“…The etching of Si wafer was done as per protocol by Huang et al with minor modifications [19]. PSi samples were prepared by wet electrochemical etching process at room temperature using p-type, boron-doped one side polished Si wafer in 100 orientation with a thickness of 525 ± 25 µm and resistivity of 1-10 Ω cm.…”
Section: Methodsmentioning
confidence: 99%