A thermal aging study on both Au-Cu and Au-Al wire-bonded interfaces

Unique properties of SiC lead this semiconductor for applications in new electronic devices operating at high temperatures, high power and high frequencies. There are a few problems related to the production of high temperature SiC devices. Developing of reliable ohmic contacts to SiC structure as well as a wire connection between the SiC ohmic contact and package leads are the serious tasks for today. An investigation of properties of high temperature Al wire bonds between SiC and package leads was the aim of this work. Preliminary results of contacts resistance as well as the wire loop pull test show that Al-Al interconnection system can be use successfully up to 350°C

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A thermal aging study on both Au-Cu and Au-Al wire-bonded interfaces

Cited by 4 publications

References 4 publications

Challenges of Cu wire bonding on low-k/Cu wafers with BOA structures

Challenges of Cu wire bonding on low-k/Cu wafers with BOA structures

Wafer Probing Simulation for Copper Bond Pad Based BPOA Structure

High temperature applications of Al wire connection to SiC structures

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