1968
DOI: 10.1016/0038-1101(68)90088-9
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A theory of 1f noise at semiconductor surfaces

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Cited by 27 publications
(7 citation statements)
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“…Studies of current noise in semiconductors [4][5][6][7] and in thick film resistors g have been carried out. The explanations deduced from these studies are scattered and restricted to some specified material only.…”
Section: Introductionmentioning
confidence: 99%
“…Studies of current noise in semiconductors [4][5][6][7] and in thick film resistors g have been carried out. The explanations deduced from these studies are scattered and restricted to some specified material only.…”
Section: Introductionmentioning
confidence: 99%
“…If we assume that all multipath components have doppler frequencies centered around u>i 0 and increase by an increment of Awi 0 , it can be shown that the doppler contribution is equivalent to exp(jui 0 t/2) sm } inAl l i JI 2 . Thus, the contribution of doppler is equivalent to a sine function whose first zero occurs about Auio{LM)t/2 = 7T which corresponds to t = 2ir/(Au>i 0 (LM)) = 1//, where /, is the total doppler spread (/, = (Z,M)AW/(2JT)).…”
Section: -15mentioning
confidence: 99%
“…The object was 1 or more point objects. A point object at position x 0 , y 0 , z 0 would be represented by a spherical wave <p 0 …”
Section: Numerical Simulationmentioning
confidence: 99%
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