A theoretical study of thermal management of FBAR considering thickness- and temperature-dependent thermal conductivity of AlN

Abstract

Reliable and long-term operation of thin film bulk acoustic resonators (FBARs) under high power relies on the optimization of thermal resistance. In this work, thermal design strategies for high power FBARs are explored theoretically. For accurate estimation of the thermal characteristics of FBARs, the thermal conductivity of the AlN epilayer with temperature and thickness dependence is included in the finite element simulation model, of which AlN thermal conductivity is calculated through normal-process, Umklapp, and boundary scattering. To further reduce thermal resistance and improve power capacity, the effects of aspect ratio, AlN thickness, the number of resonators, and pitch distance on thermal resistance are investigated. Compared with FBARs with a square electrode, the thermal resistance of the FBAR-on-diamond device is decreased by 43% at an aspect ratio of three. Meanwhile, the optimal AlN thickness is 2 µm, which maintains the balance between thermal resistance and electric performance. The power capacity is increased by 1.93 dB by substituting six resonators for four resonators. The improvement in power handling ability is attributed to the reduced thermal spreading resistance and lower power density. Our study can provide detailed thermal design strategies for high power FBARs toward high throughput data transmission.