2023
DOI: 10.1016/j.matpr.2022.08.158
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A theoretical study of InAs/InP and InAs/GaAs QDs systems: Formation mechanisms and photoluminescence characterization

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“…The possibility to grow thin-films made of ternary III-V alloys with different fractions of their constituent elements allows for the precise engineering of their optical properties [30]. Dislocations, the main limitation to the solar cell performance, can be avoided because Ga x In (1−x) P can be lattice matched to GaAs [31]. Ternary compounds have one degree of freedom in selecting lattice constant.…”
Section: Gaas and Gainp Materialsmentioning
confidence: 99%
“…The possibility to grow thin-films made of ternary III-V alloys with different fractions of their constituent elements allows for the precise engineering of their optical properties [30]. Dislocations, the main limitation to the solar cell performance, can be avoided because Ga x In (1−x) P can be lattice matched to GaAs [31]. Ternary compounds have one degree of freedom in selecting lattice constant.…”
Section: Gaas and Gainp Materialsmentioning
confidence: 99%