A theoretical model of high Curie temperature for N-type ferromagnetic diluted semiconductors based on iron-doped indium antimonide

Mekuye, Bawoke; Abera, Birhanu

doi:10.3389/fphy.2023.1196391

Cited by 3 publications

References 45 publications

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Effects of manganese concentration and temperature on the ferromagnetism of manganese‐doped gallium arsenide semiconductor

Abera,

Mekuye

2023

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The main objective of the review was to investigate the ferromagnetism of diluted magnetic semiconductors made of Mn‐doped GaAs. Manganese‐doped gallium arsenide has recently become an important field of research because of its potential applications in the fields of spintronics and magnetic devices. The magnetic moment caused by adding manganese to the GaAs crystal structure causes a low‐temperature ferromagnetic behavior. The main factor that affects the ferromagnetic properties of Mn‐doped gallium arsenic is manganese concentration. Understanding the relationship between Mn concentration and magnetic properties is important for material optimization in specific applications. It was found that Mn‐doped GaAs exhibit paramagnetic behavior below a specific critical concentration. However, the substance is transformed into a ferromagnetic state over the maximum concentration. The Curie temperature is an important additional factor influencing the ferromagnetic properties of Mn‐doped GaAs. The temperature at which a material ceases to exhibit ferromagnetic behavior is known as the Curie temperature. The Curie temperature of a material depends on its Mn concentration, thin film thickness, and degree of disturbance. A reduction in magnetic resistance increases the concentration of Mn‐treated gallium arsenic and increases its rate as it reaches its maximum value. High Curie temperatures are the result of stronger magnetic interactions resulting from higher manganese concentrations. The specific heat capacity of Mn‐doped gallium arsenide is influenced by its magnetic and structural contribution.

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Effects of manganese concentration and temperature on the ferromagnetism of manganese‐doped gallium arsenide semiconductor

Abera,

Mekuye

2023

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Computational investigation of high Curie temperature in a new N‐type ferromagnetic diluted magnetic semiconductors, especially iron‐doped on GaSb

Mekuye,

Atnafu,

Yibeltal

et al. 2024

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Diluted magnetic semiconductors have become a research area in the past few years due to the importance of new technology, spintronics devices, and green technology to withstand rising global temperatures. Both n‐type and p‐type diluted magnetic semiconductors are used in pairs for perfect performance, especially for p‐n junction diodes, the p‐d Zener model, GMR, and TMR spintronics devices. The main challenge for some researchers is to find a ferromagnetic diluted magnetic semiconductor with a Curie temperature greater than room temperature for both n‐type and p‐type ferromagnetic diluted semiconductors, but this study has solved this problem. In the present study, the ferromagnetic properties of an n‐type gallium iron antimonide diluted semiconductor have been studied using the Hamiltonian model without applying an external magnetic field, electric field, or chemical potential. We have formulated a Hamiltonian model in the system, considering the application of the green formalism function and the transformation of Holstein–Primakaff. The Curie temperature, dispersion, number of magnons, reduced magnetization, and specific heat capacity of ferromagnetic magnons of the n‐type (Ga, Fe)Sb formula are formulated. The Curie temperature versus concentration graph is plotted, and the specific heat capacity and magnetization versus temperature graphs are plotted. In this study, a surprising situation is that the Curie temperature of n‐type diluted magnetic semiconductor is investigated above room temperature, which is 330.4 K. The ferromagnetic properties of appear up to 330.4 K, which is able to play a major role in spintronic and next‐generation green nanotechnology devices.

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Magnetic Semiconductors Obtained by Replacing One of the Atoms of a Quaternary Heusler Alloy with a Lanthanide Element

Liu,

Guo,

Tao

et al. 2024

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A theoretical model of high Curie temperature for N-type ferromagnetic diluted semiconductors based on iron-doped indium antimonide

Cited by 3 publications

References 45 publications

Effects of manganese concentration and temperature on the ferromagnetism of manganese‐doped gallium arsenide semiconductor

Effects of manganese concentration and temperature on the ferromagnetism of manganese‐doped gallium arsenide semiconductor

Computational investigation of high Curie temperature in a new N‐type ferromagnetic diluted magnetic semiconductors, especially iron‐doped on GaSb

Magnetic Semiconductors Obtained by Replacing One of the Atoms of a Quaternary Heusler Alloy with a Lanthanide Element

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