A theoretical investigation of the power-law response of metal oxide semiconductor gas sensors ΙI: Size and shape effects

Hua, Zhongqiu; Qiu, Zhilei; Li, Yan; Yan, Zhenlin; Wu, Yi; Tian, Xuelin; Wang, Mengjun; Li, Er‐Ping

doi:10.1016/j.snb.2017.09.189

Cited by 59 publications

(36 citation statements)

References 26 publications

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“…It was observed that a linear relationship indicating a power-law response within all P O2 ranging from 0.06 to 0.99 atm (1 atm = 100% in volume) and the linear fitting coefficients were 0.42 and 0.62 for pristine and Rh-WO 3 , respectively. This indicated that the main type of oxygen adsorption was in the form of O − for both sensors (Hua et al, 2018a , b ) at working temperature of 300°C through:

In case of 2 wt.% Rh-WO 3 , the linear plot of ln R g with ln P O2 was also valid. Remarkably, the slope, i.e., fitting coefficient was just 0.29, considerably <0.5.…”

Section: Resultsmentioning

confidence: 84%

Acetone Sensing Properties and Mechanism of Rh-Loaded WO3 Nanosheets

Qiu

Hua

et al. 2018

Front. Chem.

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WO3 nanosheets was prepared by an acidification method and the Rh catalyst was dispersed on the surface of the nanosheets with a wet impregnation method. The morphology of pristine WO3 and Rh modified WO3 nanosheets and their responses to acetone gas were studied. According to oxygen adsorption combined with TPR results, the sensing and sensitization mechanism of acetone were discussed. It was found that no visible changes in nanostructures or morphologies were observed in WO3 nanosheets with Rh, however, the sensor resistance and sensor response were greatly promoted. The basic sensitization mechanism could be caused by the electronic interaction between oxidized Rh and WO3 surface.

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In case of 2 wt.% Rh-WO 3 , the linear plot of ln R g with ln P O2 was also valid. Remarkably, the slope, i.e., fitting coefficient was just 0.29, considerably <0.5.…”

Section: Resultsmentioning

confidence: 84%

Acetone Sensing Properties and Mechanism of Rh-Loaded WO3 Nanosheets

Qiu

Hua

et al. 2018

Front. Chem.

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“…From several experiments it has been observed that the change in conduction due to exposure to a target gas follows a power law response [76,122]. With this in mind, Hua et al [122,123,124] developed a model to simulate the change in SnO2 conductivity after it is exposed to CO in dry air, thereby avoiding any influence of ambient humidity. The transducer model assumes two conducting mechanisms taking place, described by the Schottky barrier model and the grain model.…”

Section: Modeling the Smo Sensing Mechanismmentioning

confidence: 99%

Thermo-Electro-Mechanical Simulation of Semiconductor Metal Oxide Gas Sensors

Filipovic

Selberherr

2019

Materials

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There is a growing demand in the semiconductor industry to integrate many functionalities on a single portable device. The integration of sensor fabrication with the mature CMOS technology has made this level of integration a reality. However, sensors still require calibration and optimization before full integration. For this, modeling and simulation is essential, since attempting new, innovative designs in a laboratory requires a long time and expensive tests. In this manuscript we address aspects for the modeling and simulation of semiconductor metal oxide gas sensors, devices which have the highest potential for integration because of their CMOS-friendly fabrication capability and low operating power. We analyze recent advancements using FEM models to simulate the thermo-electro-mechanical behavior of the sensors. These simulations are essentials to calibrate the design choices and ensure low operating power and improve reliability. The primary consumer of power is a microheater which is essential to heat the sensing film to appropriately high temperatures in order to initiate the sensing mechanism. Electro-thermal models to simulate its operation are presented here, using FEM and the Cauer network model. We show that the simpler Cauer model, which uses an electrical circuit to model the thermo-electrical behavior, can efficiently reproduce experimental observations.

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“…/k des and γ is used to account for the effects of humidity. A deeper investigation for the modeling of power law exponent n = 1/(α + γ) has been performed by Hua et al [152][153][154] and is described in the next section. However, after the oxygen is depleted, there is an observed switch in conduction mechanisms from depletion-layer controlled to accumulation-layer controlled, discussed in the previous section and illustrated in Figure 19 and Figure 20.…”

Section: Sensing Mechanism Of the Smo Filmmentioning

confidence: 99%

“…Power-law response.-Recently, Hua et al [152][153][154] investigated means to physically model the power-law response of SMO gas sensors. The exponent in the power-law response is one of the primary problems in fully understanding the sensing mechanism of MOS gas sensors and in providing an accurate physical model.…”

Section: Sensing Mechanism Of the Smo Filmmentioning

confidence: 99%

Review—System-on-Chip SMO Gas Sensor Integration in Advanced CMOS Technology

Filipovic

Lahlalia

2018

J. Electrochem. Soc.

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The growing demand for the integration of functionalities on a single device is peaking with the rise of IoT. We are near to having multiple sensors in portable and wearable technologies, made possible through integration of sensor fabrication with mature CMOS manufacturing. In this paper we address semiconductor metal oxide sensors, which have the potential to become a universal sensor since they can be used in many emerging applications. This review concentrates on the gas sensing capabilities of the sensor and summarizes achievements in modeling relevant materials and processes for these emerging devices. Recent advances in sensor fabrication and the modeling thereof are further discussed, followed by a description of the essential electro-thermal-mechanical analyses, employed to estimate the devices' mechanical reliability. We further address advances made in understanding the sensing layer, which can be modeled similar to a transistor, where instead of a gate contact, the ionosorped gas ions create a surface potential, changing the film's conduction. Due to the intricate nature of the porous sensing films and the reception-transduction mechanism, many added complexities must be addressed. The importance of a thorough understanding of the electro-thermal-mechanical problem and how it links to the operation of the sensing film is thereby highlighted.

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A theoretical investigation of the power-law response of metal oxide semiconductor gas sensors ΙI: Size and shape effects

Cited by 59 publications

References 26 publications

Acetone Sensing Properties and Mechanism of Rh-Loaded WO3 Nanosheets

Acetone Sensing Properties and Mechanism of Rh-Loaded WO3 Nanosheets

Thermo-Electro-Mechanical Simulation of Semiconductor Metal Oxide Gas Sensors

Review—System-on-Chip SMO Gas Sensor Integration in Advanced CMOS Technology

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