A THEORETICAL INVESTIGATION OF THE ELECTRICAL PROPERTIES OF <font>ZnMgO</font>/<font>ZnO</font> HETEROJUNCTION FIELD EFFECT TRANSISTOR

Amirabbasi, Mohammad

doi:10.1142/s0217984913501704

Cited by 5 publications

(3 citation statements)

References 13 publications

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“…Values Density of crystal (ρ) [22] 6.1 × 10 3 (kgm −3 ) Deformation potential energy (EL) [23] 3.5(eV ) High-frequency dielectric constant (ε∞) [24] 3.72ε0(F m −1 ) Static dielectric constant (εs) [24] 8.12ε0(F m −1 ) Effective mass (m * ) [24] 0.3m0(kg) ZnO lattice constant (a0) [17] 0.521(nm)) Piezoelectric constant (hpz) [22] 1.10(Cm −2 ) Sound velocity (s) [22] 6.59 × 10 3 (ms −1 )…”

Section: Materials Parametersmentioning

confidence: 99%

“…Since carrier confinement can influence electron mobility, ZnMgO/ZnO/ZnMgO double quantum well has been fabricated recently [14,15]. The ability to fabricate a ZnMgO-heterostructure makes the fabrication of ZnMgO-high electron mobility transistors (HEMT) possible [16], which have received more attention recently [17][18][19]. Transport properties such as carrier mobility (µ) and carrier concentration (n) are crucially important, because the operation of all these devices depends critically on current transport.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

The electrical transport properties in ZnO bulk, ZnMgO/ZnO and ZnMgO/ZnO/ZnMgO heterostructures

امیرعباسی¹,

سارسری²

2018

IJPR

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In this paper, the reported experimental data in [Sci. Rep., 2012, 2, 533] related to electrical transport properties in bulk ZnO, ZnMgO/ZnO, and ZnMgO/ZnO/ZnMgO single and double heterostructures were analyzed quantitatively and the most important scattering parameters for controlling electron concentration and electron mobility were obtained. Treatment of intrinsic mechanisms included polar-optical phonon scattering, piezoelectric scattering and acoustic deformation potential scattering. For extrinsic mechanisms, ionized impurity, dislocation scattering, and strain-induced fields were included. For bulk ZnO, the reported experimental data were corrected for removing the effects of a degenerate layer at the ZnO/sapphire interface via a two layer Hall effect model. Also, donor density, acceptor density and donor activation energy were determined via the charge balance equation. This sample exhibited hopping conduction below 50K and dislocation scattering closely controlled electron mobility closely. The obtained results indicated that the enhancement of electron mobility in double sample, compared with the single one, can be attributed to the reduction of dislocation density, two dimensional impurity density in the potential well due to background impurities, and/or interface charge and strain-induced fields, which can be related to better electron confinement in the channel and enhancement in the sheet carrier concentration of 2DEG in this sample.

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Section: Materials Parametersmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The electrical transport properties in ZnO bulk, ZnMgO/ZnO and ZnMgO/ZnO/ZnMgO heterostructures

امیرعباسی¹,

سارسری²

2018

IJPR

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“…[2][3][4][5][6][7][8][9] Similar to the AlGaN/GaN hetero structure, 10 very high electron concentrations (% 10 12 cm À2 to 10 13 cm À2 ) are obtained as a result of polarization effects and a large conduction band offset for the ZnMgO/ZnO hetero interface, even in the absence of any intentional impurity doping. [11][12][13][14][15][16][17] Crucial aspects of improving the efficiency of ZnO-based devices is their electron mobility and the transport properties of the two-dimensional electron gas (2DEG). To increase the mobility of ZnMgO/ZnO structures, the effects of scattering mechanisms and device characteristics should be understood.…”

Section: Introductionmentioning

confidence: 99%

Electron-Transport Properties of a ZnMgO/ZnO Hetero Structure and the Effect of Interface Roughness and ZnMgO Thickness

Özdemir

Yarar

Özdemir

et al. 2015

Journal of Elec Materi

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The electron-transport properties of a Zn 1Àx Mg x O/ZnO hetero structure were studied by use of an ensemble Monte Carlo technique. There was no intentional doping in the profile and the entire charge is because of polarization of charges at the interface. Interface roughness, and the intensity of acoustic and optic phonon scattering were used in the ensemble Monte Carlo method to find the transport properties of the two-dimensional electron gas (2DEG). The lowfield mobility characteristics of the structure were determined as a function of temperature, the thickness of the ZnMgO layer, and the interface roughness. The interface roughness was found to have a very large effect on the drift mobility of carriers, especially at low temperatures. It was observed that as the thickness of the ZnMgO increases the concentration of electrons increases whereas the mobility of the electrons decreases. The low-field mobility values obtained from ensemble Monte Carlo simulations were in agreement with published experimental data.

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Ternary mixed crystal effects on optical phonons in wurtzite ZnO quantum wells with asymmetric MgZnO barriers

Wang,

Qu,

Ban

2023

Micro and Nanostructures

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A THEORETICAL INVESTIGATION OF THE ELECTRICAL PROPERTIES OF ZnMgO/ZnO HETEROJUNCTION FIELD EFFECT TRANSISTOR

Cited by 5 publications

References 13 publications

The electrical transport properties in ZnO bulk, ZnMgO/ZnO and ZnMgO/ZnO/ZnMgO heterostructures

The electrical transport properties in ZnO bulk, ZnMgO/ZnO and ZnMgO/ZnO/ZnMgO heterostructures

Electron-Transport Properties of a ZnMgO/ZnO Hetero Structure and the Effect of Interface Roughness and ZnMgO Thickness

Ternary mixed crystal effects on optical phonons in wurtzite ZnO quantum wells with asymmetric MgZnO barriers

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