A Theoretical/Experimental Study of Silicon Epitaxy in Horizontal Single-Wafer Chemical Vapor Deposition Reactors

Abstract

The main goal of this study is to examine the possibility of using detailed three-dimensional simulations of transport of momentum, energy, and mass in horizontal single-wafer epitaxial silicon reactors in conjunction with relatively simple kinetic models to describe the reactor's performance over the entire range of operating conditions. As the SiHCl 3 -H 2 system is a widely used precursor for epitaxial silicon deposition in industrial applications, we have chosen to focus our model development on this system. In the development of the model we have considered the dependence of the gas properties on the gas composition as well as on the temperature. In addition, mass transport due to thermal diffusion has been considered. The accuracy of the simulation model has been examined by comparing the predicted silicon deposition rates and profiles in two commercial chemical vapor deposition (CVD) reactors with the experimentally measured values. A comparison of simulation and experimental results has indicated that a detailed transport model in conjunction with a Langmuir-Hinshelwood type kinetic model for silicon deposition accurately describes the epitaxial silicon deposition rate and deposition profile. In turn, this lumped reaction kinetic model has been used for optimization of commercially available horizontal CVD reactors for epitaxial deposition of silicon. Figure 1. Schematic representation of a typical horizontal CVD reactor.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.194.20.173 Downloaded on 2015-06-17 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.194.20.173 Downloaded on 2015-06-17 to IP

Simulation of aerosol dynamics and transport in chemically reacting particulate matter laden flows. Part I: Algorithm development and validation

“…Speciÿcally, in this study the Stone's method (Stone, 1968) and the AMG method (Lonsdale, 1993) have been used. Additional details are provided in Kommu (2001).…”

“…Landgrebe and Pratsinis (1990) and Kommu (2001) list the values and the functional forms of the di erent physical properties in Eq. (1).…”

“…In all our studies, we have ensured that both mass and number density is conserved although Landgrebe and Pratsinis (1990) argued that better results are obtained if the square of the mass is conserved. It should be noted that if small enough section spacing is used (i.e., approximately 1.1), both mass and number density are conserved and there is no need for conservation of the square of the mass (Kommu, 2001). However, if large section spacing is used, the square of the mass provides a better criterion for convergence as suggested by Landgrebe and Pratsinis (1990) (see Section 4 for more details).…”

“…The values of the di erent constants in Eqs. (4) and (5) are given in Landgrebe and Pratsinis (1990) and Kommu (2001). In what follows, a brief description of the computational strategy used in this study is provided.…”

Cluster Kinetics of Phase Transitions: Applications to Innovative Technologies

“…The presence of impurities in the semiconductor material can lead to an excess of holes or free electrons, resulting in poor properties, and is one of the major limitations for the efficient processing of semiconductors (Kommu et al, 2004). Particulate impurities can be generated inside a CVD reactor through chemical processes such as the gas phase reactions between SiHCl 3 and H 2 used for growing epitaxial films (Kommu et al, 2000). Mathematical models that account for the basic mechanisms for particle generation and transport within CVD reactors need to be developed.…”