A theoretical and experimental evaluation of III–nitride solar-blind UV photocathode

Ren, Bin; Guo, Hui; Shi, Feng; Cheng, Hongchang; Liu, Hui; Liu, Jian; Shen, Z; Shi, Yan-Li; Liu, Pei

doi:10.1088/1674-1056/26/8/088504

Cited by 3 publications

(4 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…GaN photocathode can be applied to the field of highdensity spin-polarized electronic sources due to its unique quantum efficiency (QE), small dark current, and high polarization. [1][2][3] With the rise of nanotechnology, lowdimensional structures have enormous potential applications in electronics and optoelectronics. [4][5][6][7][8][9][10][11] For example, recently proposed two-dimensional and nanowire arrays materials have peculiar magnetic and optical properties, providing novel possibilities for traditional electronic devices.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Comparison of quantum and collection efficiency of field‐assisted uniform‐doping and exponential‐doping GaN nanowire cathodes

Liu

2020

Int J Energy Res

View full text Add to dashboard Cite

Summary The field‐assisted method is proposed to increase electron capture of the GaN nanowire cathode. We deduce the photoemission or electron collection efficiencies of the field‐assisted uniform‐doping and exponential‐doping cathodes using the diffusion‐drift formula. Results show that the external electric field has a significantly better collection efficiency for uniform‐doping nanowire cathodes than that of exponential‐doping. In cathodes without a build‐in field, quantum efficiency and collection efficiency reached a maximum at incident angles of 65° and 45°, and field intensity of 0.1 and 0.7 V/μm, respectively. The external electric field also contributes to the polarization of GaN nanowires. The field‐assisted GaN NWAs (nanowirearray) cathode could improve the photoemission performance and are expected to be realized in the follow‐up experiment.

show abstract

Section: Introductionmentioning

confidence: 99%

“…GaN photocathode can be applied to the field of high‐density spin‐polarized electronic sources due to its unique quantum efficiency (QE), small dark current, and high polarization . With the rise of nanotechnology, low‐dimensional structures have enormous potential applications in electronics and optoelectronics .…”

Section: Introductionmentioning

confidence: 99%

Comparison of quantum and collection efficiency of field‐assisted uniform‐doping and exponential‐doping GaN nanowire cathodes

Liu

2020

Int J Energy Res

View full text Add to dashboard Cite

show abstract

“…And infrared detectors used for auxiliary medical treatment, security monitoring, and biological testing 6‐8 . As well as the increasing human interest in exploring outer space and the scientific research needs of ocean monitoring, ultraviolet detectors have become a hot spot in recent years 9‐12 . At the same time, the rapid development of nanotechnology has brought new vitality to many traditional industries.…”

Section: Introdutionmentioning

confidence: 99%

“…[6][7][8] As well as the increasing human interest in exploring outer space and the scientific research needs of ocean monitoring, ultraviolet detectors have become a hot spot in recent years. [9][10][11][12] At the same time, the rapid development of nanotechnology has brought new vitality to many traditional industries. At the nanoscale, materials will exhibit relatively different physical properties, which makes nanoscale optoelectronic devices have a great space for development.…”

Section: Introdutionmentioning

confidence: 99%

Theoretical study on2Dphotoelectric emission ofGaNnanorod array and nanocone array photocathode

Zhang

Liu

et al. 2020

Int J Energy Res

View full text Add to dashboard Cite

Summary In order to improve the photoemission performance of gallium nitride (GaN) ultraviolet vacuum photoelectric devices and to obtain GaN photocathode with high quantum efficiency in this paper. The photoelectric emission theoretical models of GaN nanorod array and GaN nanocone array are constructed, and the models are simulated by COMSOL Multiphysics and MATLAB software. By changing the structure of the photocathode emission layer, the low photoemission performance of the conventional reflection‐mode thin‐film photocathode can be improved. After calculating and analyzing the influence of the geometric parameters of the nanorod array on its quantum efficiency (QE), it is found that the nanorod array has the best diameter and spacing to maximize its QE, and the nanocone array can also achieve high QE under some conditions. In addition, the high QE GaN nanorod array and nanocone array structures obtained in this article can provide some references for the production and manufacture of high‐performance GaN photocathode.

show abstract

Optoelectronic properties of Ga1−xAlxN superlattice nanowires tuned by multilayer Al composition via first-principles

Yang

Dai

et al. 2023

Int. J. Mod. Phys. B

View full text Add to dashboard Cite

Considering that the graded structure could generate an electric field, the structure and optoelectronic properties of Ga[Formula: see text]Al[Formula: see text]N superlattice nanowires are considered via first-principles. The structural stability and optoelectronic properties of single-component and component-graded nanowires are discussed. For Ga[Formula: see text]Al[Formula: see text]N superlattice nanowires, the formation energy decreases with increasing Al composition, resulting in a structure that tends to be stable. The Ga[Formula: see text]Al[Formula: see text]N superlattice model is more stable and the bond length changes more dramatically in the superlattice structure with bigger component divergence. The bandgap [Formula: see text] increases with increasing Al composition. The direct bandgap of Ga[Formula: see text]Al[Formula: see text]N superlattice nanowires is also affected by the nanowire sublayers. The absorption coefficient tends to increase with the increase of Al composition in the nanowires. These studies can serve as the basis for the preparation of ideal materials for deep ultraviolet photocathodes and improve the optoelectronic properties of deep ultraviolet photocathodes.

show abstract

A theoretical and experimental evaluation of III–nitride solar-blind UV photocathode

Cited by 3 publications

References 24 publications

Comparison of quantum and collection efficiency of field‐assisted uniform‐doping and exponential‐doping GaN nanowire cathodes

Comparison of quantum and collection efficiency of field‐assisted uniform‐doping and exponential‐doping GaN nanowire cathodes

Theoretical study on2Dphotoelectric emission ofGaNnanorod array and nanocone array photocathode

Optoelectronic properties of Ga1−xAlxN superlattice nanowires tuned by multilayer Al composition via first-principles

Contact Info

Product

Resources

About