A Test Platform for the Noise Characterization of SiGe Microbolometer ROICs

Abbasi, Shahbaz; Shafique, Atia; Ceylan, Omer; Kaynak, Canan Baristiran; Kaynak, Mehmet; Gürbüz, Yaşar

doi:10.1109/jsen.2018.2844864

Cited by 8 publications

(5 citation statements)

References 9 publications

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“…In this review, the sensing mechanisms, thermal-isolation structures, and IR absorbing structures/materials of CMOS-MEMS IR sensors will be discussed in the following sub-sections. Moreover, according to the compatible and available materials for CMOS platforms, the sensing mechanisms of CMOS-MEMS IR sensors can be characterized into thermoelectric type [44][45][46][47][49][50][51][52][53][54][55][56][57][58] and bolometer type [43,[59][60][61][62][63][64][65][66]. Thus, the CMOS-MEMS IR sensors based on these two different sensing mechanisms will be discussed respectively.…”

Section: Infrared (Ir) Sensorsmentioning

confidence: 99%

“…Reprinted with permission from [63]. [59][60][61][62][63] to detect the temperature through the electrical resistance change. The approach to employ the voltage drop of the diode to detect temperature has also been demonstrated in CMOS-MEMS bolometers [64][65][66].…”

Section: Bolometermentioning

confidence: 99%

“…Similar post-CMOS processes are also used to fabricate an additional vanadium oxide structure on a CMOS chip for microbolometers [58]. In addition to the conventional CMOS platforms, the Ge-doped poly-Si (poly-SiGe) available in bipolar CMOS (BiCMOS) platform could offer high TCR, and hence has been employed as the temperature sensing material for CMOS-MEMS bolometers [62,63]. As indicated in figure 7(c), the TCR-based poly-SiGe bolometer fabricated by the imec BiCMOS platform showed excellent performance [63].…”

Section: Cmos-mems Bolometersmentioning

confidence: 99%

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CMOS-MEMS technologies for the applications of environment sensors and environment sensing hubs

Lee

Hsieh

Lin

et al. 2021

J. Micromech. Microeng.

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The booming growth in environmental conditions sensing and monitoring pushes the need of inexpensive environment sensors with small size and low power consumption. The outbreak of COVID-19 further increases the need for fast monitoring of environment conditions. The micro-electrical-mechanical-systems (MEMS) technologies are considered as promising solutions to realize the required environment sensors. The mature complementary metal-oxide-semiconductor (CMOS) process platforms available in many foundries can be extended to fabricate MEMS sensors to offer the advantage of relatively easier commercialization. Moreover, by leveraging the characteristics of CMOS process platforms, the integration of multiple sensors and sensing circuits to form a compact sensing system can also be achieved. This review paper will focus on introducing the miniaturized environmental sensing devices implemented and integrated using the CMOS-MEMS technologies. In general, the CMOS chips for environment sensing are firstly fabricated using the foundry-available CMOS processes, and then the post-CMOS micromachining processes are performed to implement the CMOS-MEMS environment sensors. This paper respectively reviews five different environment sensors (including the infrared, pressure (barometer), humidity/temperature, and gas sensors) using the CMOS-based MEMS technologies. The advantages and design concerns of sensors fabricated by different CMOS and post-CMOS processes are introduced and discussed. Moreover, the CMOS-MEMS environment sensing hub implemented through the monolithic integration of multiple environment sensors is also introduced.

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Section: Infrared (Ir) Sensorsmentioning

confidence: 99%

Section: Bolometermentioning

confidence: 99%

Section: Cmos-mems Bolometersmentioning

confidence: 99%

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CMOS-MEMS technologies for the applications of environment sensors and environment sensing hubs

Lee

Hsieh

Lin

et al. 2021

J. Micromech. Microeng.

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“…In other words, proposed sensors are based on absorber structure, which is heated by energy emitted from fusion plasma [1][2][3]. These kinds of photodetectros have outstanding features for infrared thermal sensing with temperature-dependent resistors due to low cost, ease of manufacturing, and terahertz (THz) detection capability that used for several uncooled sensors, widely [4]. In proposed sensors, using a metallic thin film on the backside of the plasmonic absorber structure, is provided with measurement of the temperature changes [5].…”

Section: Introductionmentioning

confidence: 99%

Design and Analytical Evaluation of a High Resistance Sensitivity Bolometer Sensor Based on Plasmonic Metasurface Structure

Hamouleh-Alipour

Mir

Farmani

2022

IEEE J. Select. Topics Quantum Electron.

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Section: Introductionmentioning

confidence: 99%

Design and Analytical Evaluation of A High Resistance Sensitivity Bolometer Sensor Based on Plasmonic Metasurface Structure

Hamouleh-Alipour

Mir

Farmani

2021

Preprint

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Bolometer sensors are prominent and excellent choice in technology because they do not need cooling. The trade-off between high sensitivity, fast response time, and strong light absorption is a key important challenge in bolometer sensors. Here, the bolometric effect for a high resistance sensitivity plasmonic sensing of total and profile infusion of radiation is studied for the proposed bolometer sensor based on plasmonic multilayer structure at 26° C. In the present study, by generating strong coupling condition between incident wave and surface plasmon polaritons (SPPs), a very narrow absorption spectra with high figure of merit (FoM) is achieved. The analytical model and numerical simulation are fulfilled based on the transfer matrix method (TMM) and 3-D finite-difference time-domain (FDTD), respectively. The narrow absorption spectra that generate by strong coupling with SPPs heats the silver thin film that leads to variation in temperature and supports TE surface mode. This temperature change rectifies the resistance of the metal thin film by the bolometric effect. So, optical characteristics of the proposed metasurface bolometer sensor, including quality factor (Q), sensitivity, and figure of merit (FoM) are calculated that Max sensitivity, FoM, and Q are 17.2 RIU-1, 530 and 434.5, respectively. Finally, we analytically simulate the temperature coefficient of resistance (TCR) in terms of wavelength and refractive index of analyte (na) that this resistance change can be monitored by an external electric model. The proposed plasmonic multilayer configuration is a very compact footprint structure that achieved high resistance sensitivity and FoM in comparison with any previous reports. This proposed thermal, optical, and electric plasmonic metasurface bolometer sensor can be used in different applications such as biophysics, biology, and environmental science.

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A Test Platform for the Noise Characterization of SiGe Microbolometer ROICs

Cited by 8 publications

References 9 publications

CMOS-MEMS technologies for the applications of environment sensors and environment sensing hubs

CMOS-MEMS technologies for the applications of environment sensors and environment sensing hubs

Design and Analytical Evaluation of a High Resistance Sensitivity Bolometer Sensor Based on Plasmonic Metasurface Structure

Design and Analytical Evaluation of A High Resistance Sensitivity Bolometer Sensor Based on Plasmonic Metasurface Structure

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