2017
DOI: 10.1016/j.jcis.2016.12.056
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A ternary photocatalyst of graphitic carbon nitride/cadmium sulfide/titania based on the electrostatic assembly using two-dimensional semiconductor nanosheets

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Cited by 27 publications
(6 citation statements)
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“…More recently, Dong et al. synthesized CN/CdS/titania nanosheets (TNS) composites, and found that the encapsulation structure of CdS@nanosheets with an intimate interface favored the photoexcited carrier transfer, and thus, improved the photocatalytic performance for the degradation of organic dyes under visible‐light irradiation . Notably, semiconductor quantum dots (QDs), such as CdS, CdSe, and CdTe, have been decorated on other semiconductors to improve their optical absorbance and assist charge transfer.…”
Section: Introductionsupporting
confidence: 56%
“…More recently, Dong et al. synthesized CN/CdS/titania nanosheets (TNS) composites, and found that the encapsulation structure of CdS@nanosheets with an intimate interface favored the photoexcited carrier transfer, and thus, improved the photocatalytic performance for the degradation of organic dyes under visible‐light irradiation . Notably, semiconductor quantum dots (QDs), such as CdS, CdSe, and CdTe, have been decorated on other semiconductors to improve their optical absorbance and assist charge transfer.…”
Section: Introductionsupporting
confidence: 56%
“…So far, transition metal sulfide semiconductors such as CdS, MoS 2 , and WS 2 have achieved much attention because of their narrow bandgap and their ability to separate charges under the visible light [24][25][26][27][28] . MoS 2 with a 2D layered structure and a narrow bandgap of 2 eV is capable to absorb noticeable amount of light, with excellent thermal and chemical stability.…”
mentioning
confidence: 99%
“…The corresponding UV–vis absorption spectra of all samples were studied to reveal their optical absorption properties. As displayed in Figure a, pure In 2 O 3 can absorb the light source less than 450 nm wavelength because of the large band gap (2.8 eV). , By contrast, narrow band gap semiconductor CdS (2.4 eV) exhibited a wide absorption edge at about 580 nm. ,, Compared with pristine In 2 O 3 , the decoration with Au NPs caused an enhancement of the visible-light absorption (Figure S2b) because of the SPR effect of Au, and the optical absorption increased with the introduction of Au NPs. The deposition of CdS QDs led to the red-shifted absorption edge, whether for In 2 O 3 /CdS- y (Figure S3b) or for In 2 O 3 /Au/CdS- y (Figure a).…”
Section: Resultsmentioning
confidence: 99%
“…12,14 By contrast, narrow band gap semiconductor CdS (2.4 eV) exhibited a wide absorption edge at about 580 nm. 18,27,58 Compared with pristine In 2 O 3 , the decoration with Au NPs caused an enhancement of the visible-light absorption (Figure S2b) because of the SPR effect of Au, 59−62 and the optical absorption increased with the introduction of Au NPs. The deposition of CdS QDs led to the red-shifted absorption edge, whether for In 2 O 3 /CdS-y (Figure S3b) or for In 2 O 3 /Au/ CdS-y (Figure 6a).…”
Section: ■ Experimental Sectionmentioning
confidence: 99%