2015
DOI: 10.1016/j.ijhydene.2015.05.122
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A ternary g-C 3 N 4 /Pt/ZnO photoanode for efficient photoelectrochemical water splitting

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Cited by 93 publications
(38 citation statements)
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“…After modifying the g‐C 3 N 4 system with Ni‐NiO nanoparticles, the XRD peaks were clearly noticed at 37.2°, 43.4°, 44.7°, 52.0°, and 63.0° that could be assigned to the (111), (200), (111), (200), and (220) respectively, to the crystal planes of Ni and NiO. However, the pattern of g‐C 3 N 4 is nonobservable due to the low crystallinity . Further, the typical peak of WO 3 with g‐C 3 N 4 @Ni‐NiO coated on TC was observed at 23.3 & 33.5°, 24.4 & 34.5°, and 26.6°, indicating the orthorhombic (001) & (201), cubic (200) & (220), and graphite‐like (002) diffraction plane of WO 3 and TC, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…After modifying the g‐C 3 N 4 system with Ni‐NiO nanoparticles, the XRD peaks were clearly noticed at 37.2°, 43.4°, 44.7°, 52.0°, and 63.0° that could be assigned to the (111), (200), (111), (200), and (220) respectively, to the crystal planes of Ni and NiO. However, the pattern of g‐C 3 N 4 is nonobservable due to the low crystallinity . Further, the typical peak of WO 3 with g‐C 3 N 4 @Ni‐NiO coated on TC was observed at 23.3 & 33.5°, 24.4 & 34.5°, and 26.6°, indicating the orthorhombic (001) & (201), cubic (200) & (220), and graphite‐like (002) diffraction plane of WO 3 and TC, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…In a typical PEC, the photoanode is composed of a light harvester attached to a wide band gap semiconductor (i.e., TiO 2 , ZnO) that serves as electrons acceptor layer while the holes are transferred to the counter electrode through the electrolyte solution. [18][19][20][21][22] The PEC operation is considered to be more complicated compared to the photocatalysis process due be extracted by the redox electrolyte (path 3). [4,5] Particularly, in the photoanode, excited states electrons of the light harvester must be injected into the conduction band of a wide band gap semiconductor prior their self-recombination (either radiatively or nonradiatively).…”
Section: Doi: 101002/admi201600265mentioning
confidence: 99%
“…Therefore, in the present case of composite material, a stepwise transfer of electrons from photoexcited g-C 3 N 4 into CB of ZnO, and ZnO CB to GO has occurred based on the work function of the materials (Scheme 2). This process isolates active electrons and holes and, hence, decreases the electron-hole pair recombination and increase the lifespan[47][48][49]. These phenomena directly result in an intense emission quenching as revealed by the PL results inFig. ]…”
mentioning
confidence: 97%
“…The excited electrons in the CB come back to the VB via a certain course to recombine with the holes. During the recombination process of photo-induced charge carriers, the light energy released can be dissipated as radiation, which results in a PL emission intensity[47][48][49]. Thus, the lower the recombination rate of photo-induced electron-hole pairs, the lower the PL intensity.…”
mentioning
confidence: 99%