A terahertz plasmon cavity detector

Dyer, Gregory C.; Vinh, N. Q.; Allen, S. J.; Aǐzin, G. R.; Mikalopas, J.; Reno, John L.; Shaner, Eric A.

doi:10.1063/1.3513339

Cited by 31 publications

(27 citation statements)

References 22 publications

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“…5. The minimum of the NEP is about 1 pW/ √ Hz at U gs ≈ 1.1 V. The obtained results are quite similar to those presented in [10] which gives a ground to consider both types of detectors pretty close to each other. However, the proposed detector with serpentine array of FETs may have some advantages in terms of the NEP and responsivity.…”

Section: Obtained Results and Discussionsupporting

confidence: 87%

“…It is worth to mention the quadratic dependence of the latter on frequency in the THz range [12]. It should be emphasized also that two order increase in the responsivity of the detector presented in [10] was achieved by attachment of the focusing lens [4]. The resistance of the channel has a value 10 5 Ohm at the voltage 1.1 V. Therefore there is a mismatch of the impedance of free space and the receiver that reduces the responsivity.…”

Section: Obtained Results and Discussionmentioning

confidence: 98%

“…Hz at 30 kHz. A single detector with a log-periodic aerial antenna with diameter of 1.5 mm has been investigated in the frequency range 200-600 GHz at liquid helium temperature [10]. This detector has demonstrated a responsivity of 2.5 kV/W at excitation frequency of 240 GHz, its calculated NEP 100 pW/ √ Hz at 750 Hz.…”

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confidence: 99%

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Detector for terahertz applications based on a serpentine array of integrated GaAs/InGaAs/AlGaAs-field-effect transistors

Yermolaev

Khmyrova

Polushkin

et al. 2017

2017 International Conference on Applied Electronics (AE)

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Performance of a detector based on AlGaAs/InGaAs/GaAs-material system was studied. The detector was comprised of large serpentine array of high-electron mobility transistors (HEMTs) connected in series. The floating drain contact of each transistor (except the last one) served as a source for the next one. Detection of terahertz (THz) radiation was based on the excitation of electron plasma oscillations in the HEMT's channel. The peculiarities of THz response of the detector in question including an enhanced noise-equivalent power were demonstrated. *

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Section: Obtained Results and Discussionsupporting

confidence: 87%

Section: Obtained Results and Discussionmentioning

confidence: 98%

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Detector for terahertz applications based on a serpentine array of integrated GaAs/InGaAs/AlGaAs-field-effect transistors

Yermolaev

Khmyrova

Polushkin

et al. 2017

2017 International Conference on Applied Electronics (AE)

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“…The frequencies of 2D plasmons in semiconductor heterostructures conveniently fall in the THz region and can be easily tuned by changing the 2D electron density through an applied field effect. These features make 2D plasmons an excellent candidate to be used for frequency tunable THz detection [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18]. The predicted instabilities of 2D plasma waves interacting with incident THz EM radiation also provide opportunities for designing THz sources [19][20][21].…”

Section: Introductionmentioning

confidence: 99%

Transmission line theory of collective plasma excitations in periodic two-dimensional electron systems: Finite plasmonic crystals and Tamm states

Aǐzin

Dyer

2012

Phys. Rev. B

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We present a comprehensive theory of the one-dimensional plasmonic crystal formed in the grating gated two-dimensional electron gas (2DEG) in semiconductor heterostructures. To describe collective plasma excitations in the 2DEG, we develop a generalized transmission line theoretical formalism consistent with the plasma hydrodynamic model. We then apply this formalism to analyze the plasmonic spectra of 2DEG systems with step-like periodic changes of electron density and/or gate screening. We show that in a periodically modulated 2DEG, a plasmonic crystal is formed and derive closed-form analytical expressions describing its energy band spectrum for both infinite and finite size crystals. Our results demonstrate a non-monotonic dependence of the plasmonic band gap width on the electron density modulation. At so-called transparency points where the plasmon propagates through the periodic 2DEG in a resonant manner, the plasmonic band gaps vanish. In semi-infinite plasmonic crystals, we demonstrate the formation of plasmonic Tamm states and analytically derive their energy dispersion and spatial localization. Finally, we present detailed numerical analysis of the plasmonic band structure of a finite four-period plasmonic crystal terminated either by an Ohmic contact or by an infinite barrier on each side. We trace the evolution of the plasmonic band spectrum, including the Tamm states, with changing electron density modulation and analyze the boundary conditions necessary for formation of the Tamm states. We also analyze interaction between the Tamm states formed at the opposite edges of the short length plasmonic crystal. The validity of our theoretical approach was confirmed in experimental studies of plasmonic crystals in short modulated plasmonic cavities (G. C. Dyer et. al., Phys. Rev. Lett. 109, 126803 (2012)) which demonstrated excellent quantitative agreement between theory and experiment. * gregory.aizin@kbcc.cuny.edu † gcdyer@sandia.gov 2

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“…The gates of the HEMT were biased in a manner similar to previous work [23] with G3 biased beyond threshold ( ~− 2.5 ) and an applied drain current of = +500 . Under This indicates that the 10 m length from S to G3 and the PC boundary conditions primarily define the resonance condition.…”

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confidence: 99%

Inducing an Incipient Terahertz Finite Plasmonic Crystal in Coupled Two Dimensional Plasmonic Cavities

et al. 2012

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We measured a change in the current transport of an antenna-coupled, multi-gate, GaAs/AlGaAs field-effect transistor when terahertz electromagnetic waves irradiated the transistor and attribute the change to bolometric heating of the electrons in the two-dimensional electron channel. The observed terahertz absorption spectrum indicates coherence between plasmons excited under adjacent biased device gates. The experimental results agree quantitatively with a theoretical model we developed that is based on a generalized plasmonic transmission line formalism and describes an evolution of the plasmonic spectrum with increasing electron density modulation from homogeneous to the crystal limit. These results demonstrate an electronically induced and dynamically tunable plasmonic band structure.

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A terahertz plasmon cavity detector

Cited by 31 publications

References 22 publications

Detector for terahertz applications based on a serpentine array of integrated GaAs/InGaAs/AlGaAs-field-effect transistors

Detector for terahertz applications based on a serpentine array of integrated GaAs/InGaAs/AlGaAs-field-effect transistors

Transmission line theory of collective plasma excitations in periodic two-dimensional electron systems: Finite plasmonic crystals and Tamm states

Inducing an Incipient Terahertz Finite Plasmonic Crystal in Coupled Two Dimensional Plasmonic Cavities

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