A Technology-Computer-Aided-Design-Based Reliability Prediction Model for DRAM Storage Capacitors

Choi, Woo Young; Yoon, Gyu-Han; Chung, Woo Young; Cho, Younghoon; Shin, Seongun; Ahn, Kang-Hun

doi:10.3390/mi10040256

Cited by 5 publications

(3 citation statements)

References 20 publications

(21 reference statements)

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“…I G in this region is governed by the surface traps. The trap assisted carrier transport is given by [42]:…”

Section: Resultsmentioning

confidence: 99%

Investigation of the forward gate leakage current in pGaN/AlGaN/GaN HEMTs through TCAD simulations

Sarkar

2024

Semicond. Sci. Technol.

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In this study, we examined the gate leakage characteristics of normally off pGaN/AlGaN/GaN HEMTs through a simulation study. The Fowler Nordheim Tunneling (FNT) mechanism mainly contributes to the gate leakage process as indicated by the TCAD simulation. However, at low bias, the FNT undercalculates the leakage current since the electric field is low in this region. This extra leakage current component at this low bias region can be attributed to the presence of surface traps. Trap-assisted tunneling current along with the FNT current can explain forward leakage characteristics of the pGaN HEMTs. Our TCAD simulations were matched with the experimental data for five devices from four different research groups to support this claim. Using TCAD simulations, we have been able to analyze several device parameters including the various potential drops inside the gate stack structure. We were able to identify some of the trap levels and compare them to the dominant defects expected to be present in the pGaN cap layer. Furthermore, we studied the effects of different device parameters on the gate leakage process in the pGaN HEMT.

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“…I G in this region is governed by the surface traps. The trap assisted carrier transport is given by [42]:…”

Section: Resultsmentioning

confidence: 99%

Investigation of the forward gate leakage current in pGaN/AlGaN/GaN HEMTs through TCAD simulations

Sarkar

2024

Semicond. Sci. Technol.

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“…where ε, A, and h denote permittivity (dielectric constant K), area, and thickness of the insulating material, respectively. Hence, the capacitance can be increased by increasing the area of conductive parallel plates, minimizing the thickness of the dielectric (distance), or using high permittivity (High-K) materials [33]. Leakage current and depletion effect are critical factors that affect the performance of micro M-I-M capacitors.…”

Section: Related Workmentioning

confidence: 99%

Investigation of Leakage Current in Micro M-I-M Structure Using Multilayer High-K Dielectric Materials with COMSOL Multiphysics

Ullah

Huang

Amirzada

et al. 2022

ELEKTRON ELEKTROTECH

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Micro Metal-Insulator-Metal (M-I-M) capacitor structures are well-known passive components that have been broadly used in integrated circuits, Radio Frequency (RF) decoupling, Micro Electro Mechanical Systems (MEMS) sensors, and health monitoring systems. Thanks to its small dimensions, it can be easily integrated into microelectronics. With the acceleration of the scalling dawn of integrated circuits and systems, the size of the capacitor and other components must be reduced. It has become challenging to fabricate a micro M-I-M capacitor with low leakage current and high-capacity density since the leakage current and depletion effect are reported as the main factors of the gradual loss of electrical energy in the micro-M-I-M capacitor. Thus, minimizing the leakage current and the depletion effect became a new research trend. This paper presents a penta-layer high-K dielectric between the electrodes to reduce the leakage current in the micro-M-I-M capacitor. For this purpose, various dielectric materials were investigated. It was found that niobium pentaoxide (Nb2O5) and hafnium dioxide (HfO2) as penta-layer dielectric materials provide the lowest leakage current between the two electrodes. The recorded values of leakage current density are reduced to a mere 0.95 µAmps/mm2 from several µAmps/mm2 at the operating voltage of 1 V. The reported micro-M-I-M capacitor has potential application as an energy storage device.

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“…The most characteristic aspect is that it can generate the power code. It is based on the above functional integration that makes the numerical control programming function of CAXA suitable for the operation of complex spatial geometry structure [4][5] . Over the years, many experts and scholars have carried out in-depth studies on CAD and manufacturing, and the state and education management departments have also vigorously promoted it.…”

Section: Introductionmentioning

confidence: 99%

Virtual Simulation Resource Control Platform for Electric Power Training

Hao

Feng

2022

J. Phys.: Conf. Ser.

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Since virtual simulation needs multiple kinds of data as support, the construction of smooth simulation environment requires higher efficiency in data resource management and control. Based on this, a virtual simulation resource management and control platform for electric power training is proposed. On the basis of analyzing the architecture characteristics of virtual simulation engine, the platform structure of operation process simulation and optimization is designed based on three-layer BS mode. The virtual simulation platform is used as the exchange center to establish the data interface. It builds virtual simulation scenarios through mapping, and implements virtual protection tests through GOOSE messages for data management and protection. The control purpose is realized according to the operation process of the equipment and the inherent protection logic. In this paper, a communication module is designed to ensure smooth data transmission between modules. The test results show that the corresponding time of data resource request is mainly concentrated within 20ms, with good efficiency.

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A Technology-Computer-Aided-Design-Based Reliability Prediction Model for DRAM Storage Capacitors

Cited by 5 publications

References 20 publications

Investigation of the forward gate leakage current in pGaN/AlGaN/GaN HEMTs through TCAD simulations

Investigation of the forward gate leakage current in pGaN/AlGaN/GaN HEMTs through TCAD simulations

Investigation of Leakage Current in Micro M-I-M Structure Using Multilayer High-K Dielectric Materials with COMSOL Multiphysics

Virtual Simulation Resource Control Platform for Electric Power Training

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