Relative cathodoluminescence quantum intensity measurements made on YsA15012 crystals containing a series of concentrations of each of the ions Ce ~+, Eu 3+, Tb 8+, and Gd ~+ are reported as a function of temperature. For the first three of these activator ions the CL intensity increases with temperature, although the efficiency of Eu 8+ luminescence rises much more steeply at low temperatures than Ce 8+ and Tb 3+. The temperature dependence of Gd ~+ is very different, the luminescence intensity quenching rapidly above 120~ The experimental results are rationalized in terms of proposed differences in the form of the impurity potential for each of these ions. Previously detected lattice defect levels are now assigned as hole trapping centers. Ce s+ and Tb z+ form competitive hole trapping centers. Eu z+, however, is found to be a stable electron-attractive center. The potential for Gd 3+ is predicted to be weak and this center forms no stable bound state. It is possible that long-range energy transfer from the lattice defect level D~ plays some role in Gd ~+ excitation.