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2016
DOI: 10.1109/tim.2015.2507698
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A Technique for Improving the Linear Operating Range for a Relative Phase Delay Capacitive Sensor Interface Circuit

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Cited by 12 publications
(9 citation statements)
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“…In the fitted models of averaged data, instead of being limited to 45° or 25% of each half cycle, the linear range of the new phase delay circuit was expanded to 138.60° or 77.0% of each half cycle. In the data set with the lowest R 2 of 0.9989, given by test number 1 (table 3), the linear range achieved 140.04° or 77.8% of each half cycle, which is also greater than that of 133.56° or 74.2% of each half cycle achieved by Meng and Dean (2016). Again, since the maximum phase delay also depends on the range of the measured variable capacitance and the frequency of the input square wave, the maximum phase delay can potentially be further extended in other applications.…”
Section: Testing and Resultsmentioning
confidence: 81%
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“…In the fitted models of averaged data, instead of being limited to 45° or 25% of each half cycle, the linear range of the new phase delay circuit was expanded to 138.60° or 77.0% of each half cycle. In the data set with the lowest R 2 of 0.9989, given by test number 1 (table 3), the linear range achieved 140.04° or 77.8% of each half cycle, which is also greater than that of 133.56° or 74.2% of each half cycle achieved by Meng and Dean (2016). Again, since the maximum phase delay also depends on the range of the measured variable capacitance and the frequency of the input square wave, the maximum phase delay can potentially be further extended in other applications.…”
Section: Testing and Resultsmentioning
confidence: 81%
“…The transistors have low dynamic output capacitances of 9 pF for the p-channel FET at V DS = −5 V and 7.8 pF for the n-channel FET at V DS = 5 V, along with low drain-source onresistances of 10.6 Ω for the p-channel FET at V GS = −2.7 V and 3.8 Ω for the n-channel FET at V GS = 2.7 V, which suits this application well. Specifically, using the low on-resistances to pull the V C up to V DD or down to ground, instead of switching to a smaller R of 10 kΩ as used in the previous work (Meng and Dean 2016), enables a relatively high operating frequency of the entire circuit.…”
Section: Mosfets Selectionmentioning
confidence: 99%
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“…They are used to measure displacement [2], acceleration [3], flow-rate [4], and humidity [5] and perform motion tracking [6]. The interfacing circuits that translate the change in the capacitance value to data in either an analogue or a digital domain, follow conversion paradigms that convert the sensor capacitance to either voltage [7], current [8], phase [9], frequency [10], time period [11] [12] or pulse-width [13]. Choosing the appropriate conversion technique depends on factors such as the type of excitation source employed, the nature of the dielectric used in the sensor, desired resolution, and update rate.…”
Section: Introductionmentioning
confidence: 99%
“…Microelectromechanical systems (MEMS) have enabled the design of sensors with very high sensitivities, enabling a range of sensing applications [1]. Sensors that convert a physical stimulus into a capacitance are widely used for different purposes including detecting motion, pressure and acceleration [2][3][4][5]. Capacitive sensing has the benefits of a low temperature coefficient, low power dissipation and low noise.…”
Section: Introductionmentioning
confidence: 99%