A TCAD methodology for high-speed photodetectors

Jacob, Biju; Witzigmann, Bernd; Klemenc, M.; Petit, Christophe

doi:10.1016/j.sse.2005.03.001

Cited by 13 publications

(11 citation statements)

References 7 publications

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“…Modeling and Optimization of Three-Dimensional Interdigitated Lateral p-i-n Photodiodes Based on In 0.53 Ga 0.47 As Absorbers for Optical Communications 75 , a uni-travelling photodiode (UTC-PD) (Srivastava & Roenker, 2003), a vertical photodiode (Jacob et al 2005) and a silicon-based lateral p-i-n photodiode (Menon, 2005). In this work, Silvaco Atlas was used, for the first time, to develop a three dimensional model of an interdigitated lateral p-i-n photodiode based on InGaAs.…”

Section: Review Of Simulated Ingaas/inp-based Ilppmentioning

confidence: 99%

Modeling and Optimization of Three-Dimensional Interdigitated Lateral p-i-n Photodiodes Based on In0.53Ga0.47As Absorbers for Optical Communications

Menon¹,

Ehsan²,

Shaari³

2011

Advances in Photodiodes

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Section: Review Of Simulated Ingaas/inp-based Ilppmentioning

confidence: 99%

Modeling and Optimization of Three-Dimensional Interdigitated Lateral p-i-n Photodiodes Based on In0.53Ga0.47As Absorbers for Optical Communications

Menon¹,

Ehsan²,

Shaari³

2011

Advances in Photodiodes

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“…Recently, there has been much research for the study and development of high-speed photodetectors [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19]; these devices find their use in many optoelectronic applications such as optical fiber communication systems, chip-to-chip connections, optical heterodyne conversion, and so on [20][21][22][23][24]. The lateral type photodetectors are by far the most advantageous for use in monolithic GaAs optoelectronic integrated circuits (OEIC) [1,[5][6][7][8][9][10][11][12][13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Theoretical study of the DC and transient characteristics of a lateral Schottky barrier photodiode for application as high‐speed photodetector

Debbar

2015

Int J Numerical Modelling

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We present a numerical characterization of a high-speed high-responsivity GaAs lateral Schottky barrier photodiode (LSBPD). The LSBPD is a planar structure composed of interdigitated Schottky barrier and ohmic contacts. A metalsemiconductor-metal (MSM) structure with identical geometry is simulated for comparison. The dark characteristics are found identical for the two devices. Under illumination, the LSBPD exhibited significantly superior responsivity compared with the MSM, while maintaining comparatively similar response time and 3 dB bandwidths. The results of the study indicate conclusively that the lateral Schottky barrier photodiode can provide an excellent alternative to the standard MSM photodetectors for high-speed optoelectronic applications.

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“…Therefore, optimized device simulations prior to fabrication provide the advantages of reduced development cost and time in comparison to an exclusive experimental methodology [14]. Therefore, optimized device simulations prior to fabrication provide the advantages of reduced development cost and time in comparison to an exclusive experimental methodology [14].…”

Section: Introductionmentioning

confidence: 99%

The Development of a new Responsivity Prediction Model for In0.53Ga0.47As Interdigitated Lateral p-i-n Photodiode

Kandiah

Ehsan

Shaari

2009

Journal of Optical Communications

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The interdigitated lateral p-i-n photodiode (ILPP) has profound advantages compared to the vertical p-i-n photodiode (VPD) structure mainly due to the ease of fabrication where diffusion or ion implantation can be used to form the p+ and n+ wells in the absorbing layer. A novel ILPP model utilizing In 0.53 Ga 0.47 As (InGaAs) as the absorbing layer was developed and optimized statistically using fractional factorial design (FFD) methodology. Seven model factors were investigated and a new analytical equation was developed to predict the responsivity of ILPP devices as a function of design factors. Comparison between the simulated and calculated responsivity values yielded error ratios of less than 3 %. A statistically optimized ILPP model with -3 dB frequency of 7.5 GHz, responsivity of 0.61 A/W and signal-to-noise ratio (SNR) of 20 dB was developed at an operating voltage of 5 V, wavelength of 1.55 mm and optical input power of 10 Wcm -2 . Hence the model qualifies to be used as a cheap and affordable device in fiber-to-the-home based on passive-optical-networks (FTTH-PON) operating at a minimum speed of 2.5 Gbps.

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A TCAD methodology for high-speed photodetectors

Cited by 13 publications

References 7 publications

Modeling and Optimization of Three-Dimensional Interdigitated Lateral p-i-n Photodiodes Based on In0.53Ga0.47As Absorbers for Optical Communications

Modeling and Optimization of Three-Dimensional Interdigitated Lateral p-i-n Photodiodes Based on In0.53Ga0.47As Absorbers for Optical Communications

Theoretical study of the DC and transient characteristics of a lateral Schottky barrier photodiode for application as high‐speed photodetector

The Development of a new Responsivity Prediction Model for In0.53Ga0.47As Interdigitated Lateral p-i-n Photodiode

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