A tailorable polarity-flipping response in self-powered, flexible Sb₂Se₃/ZnO bilayer photodetectors

Abstract

The new era of Internet of Things has spawned the research in multifunctional photodetectors. Herein, intriguing features of dual-polarity and flexibility are creatively embraced in Sb2Se3/ZnO bilayer photodetectors. The current...

Observation of polarity-switchable photoconductivity in III-nitride/MoSx core-shell nanowires

“…Essentially, the pursuit of polarity-switchable photoconductivity behavior has recently attracted considerable interests [35][36][37] , because the polarity-switchable photocurrent can be employed to distinguish spectrum bands while measuring corresponding light intensity, which has been realized in many solid-state devices [37][38][39][40] . The proposed III-nitride/a-MoS x core-shell nanostructures demonstrate a polarityswitchable photoconductivity under different-energy photon illumination, i.e., it exhibits a polarity-switchable photoresponse with a responsivity of −100.42 mA W −1 under 254 nm illumination, and 29.5 mA W −1 under 365 nm illumination, one of the highest value among reported polarity-switchable devices 36,[38][39][40][41][42][43][44][45][46][47][48][49][50] . Moreover, the underlying mechanism of polarity-switchable photoconductivity behavior is revealed via density functional theory (DFT) calculations.…”

Progress on two-dimensional binary oxide materials

“…61,203,204 ZnO is a metal oxide semiconductor with great research value. 205,206 Compared with other competitive materials, ZnO has a larger exciton binding energy (60 meV) than GaN (26 meV). This makes it more suitable for optoelectronic applications, especially at temperatures close to and above room temperature.…”

Broadband wavelength-selective isotype heterojunction n+-ZnO/n-Si photodetector with variable polarity

“…[1]- [5] Recently, there has been a vigorous interest for the development of ZnO-based UV photodetectors which can work without bias from an external power supply. [5], [6], [7], [8] Self-powered photodetection is desirable for the development of Visible Light Communication (VLC) systems, Internet of Things (IoT) systems, triboelectric nanogenerators, etc. [5], [6], [9], [10] However, the development of blue-UV optoelectronic devices based on ZnO homojunctions is hindered by the difficulty in introducing reproducibly high-quality p-type impurities in ZnO, which exhibits intrinsically n-type conductivity due to bulk defects, such as oxygen vacancies and zinc interstitials.…”