A systematic study of the nitridation of SnO2 nanowires grown by the vapor liquid solid mechanism

Zervos, Matthew; Othonos, Andreas

doi:10.1016/j.jcrysgro.2011.11.063

Cited by 10 publications

(3 citation statements)

References 28 publications

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“…The Pb-doped SnO 2 NWs we tried to grow at 800 °C and 10 –1 mbar with 10 and 20% Pb exhibited PL at ≈550 nm or 2.25 eV, as shown in Figure , which is very similar to the PL we obtained previously from undoped SnO 2 NWs . SnO 2 has a direct energy band gap of 3.7 eV but the even-parity symmetry of the conduction-band minimum and valence-band maximum states prohibits band edge radiative transitions.…”

Section: Resultssupporting

confidence: 80%

“…The Pb-doped SnO 2 NWs we tried to grow at 800 °C and 10 −1 mbar with 10 and 20% Pb exhibited PL at ≈550 nm or 2.25 eV, as shown in Figure 5, which is very similar to the PL we obtained previously from undoped SnO 2 NWs. 32 SnO 2 has a direct energy band gap of 3.7 eV but the even-parity symmetry of the conduction-band minimum and valence-band maximum states prohibits band edge radiative transitions. The PL at ≈550 nm or 2.25 eV is attributed to radiative recombination via donor-like states, related to oxygen vacancies that are located energetically in the upper half of the energy band gap as we have shown in detail previously for SnO 2 NWs.…”

Section: Resultsmentioning

confidence: 99%

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High-Temperature Pb Doping of SnO₂ and Growth Limitations of Pb_xSn_1–xO₂ Nanowires Versus Low-Temperature Growth of Pb_xSn_1–xO for Energy Storage and Conversion

Zervos¹,

Othonos²,

Tanasă

et al. 2019

J. Phys. Chem. C

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Pb doping of SnO 2 nanowires grown by the vapor−liquid− solid mechanism on 1 nm Au/Si has been investigated between 500 and 1000 °C via the reaction of Sn-containing Pb with O 2 at 10 −1 mbar. The SnO 2 nanowires have diameters of 50 nm, lengths up to 100 μm, and a tetragonal rutile crystal structure, but they do not contain Pb because of its significant depletion during the temperature ramp and re-evaporation from the surface of the SnO 2 nanowires. Consequently, we do not observe a semiconductor to semimetal transition and band gap narrowing. Instead, the Pb reacts with O 2 , leading to the deposition of PbO directly on Si but not on the SnO 2 nanowires, which have carrier densities of ≈10 16 cm −3 . Furthermore, onedimensional growth was completely suppressed by increasing the amount of Pb in Sn. As such, Pb doping of SnO 2 and the growth of Pb x Sn 1−x O 2 nanowires is difficult, if not impossible, because PbO 2 nanowires cannot be grown by the vapor−liquid−solid mechanism irrespective of the growth temperature. In contrast, we find that the composition of Pb x Sn 1−x O nanostructures may be tuned over a broad range by lowtemperature growth at 400 °C. We discuss the properties and prospects of this ternary oxide for energy conversion and storage.

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Section: Resultssupporting

confidence: 80%

Section: Resultsmentioning

confidence: 99%

High-Temperature Pb Doping of SnO₂ and Growth Limitations of Pb_xSn_1–xO₂ Nanowires Versus Low-Temperature Growth of Pb_xSn_1–xO for Energy Storage and Conversion

Zervos¹,

Othonos²,

Tanasă

et al. 2019

J. Phys. Chem. C

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“…It is worth mentioning that all the thin film samples of TMAH–SnO 2 were annealed at 80 °C, which is far below the decomposition temperature of TMAH. As seen, the emission intensity from 400 to 500 nm, which has been attributed to the optical transitions involving surface states, − is significantly reduced with the addition of TMAH. Combined with the results of particle dispersity, FTIR, and XPS, we propose that some of the surface defects are passivated by the attached −OH .…”

Section: Resultsmentioning

confidence: 84%

Highly Stable SnO₂-Based Quantum-Dot Light-Emitting Diodes with the Conventional Device Structure

Chen

et al. 2022

ACS Nano

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ZnO-based electron-transporting layers (ETLs) have been universally used in quantum-dot light-emitting diodes (QLEDs) for high performance. The active surface chemistry of ZnO nanoparticles (NPs), however, leads to QLEDs with positive aging and unacceptably poor shelf stability. SnO 2 is a promising candidate for ETLs with less reactivity, but NP agglomeration in nonionic solvents makes the conventional device structure abandoned, resulting in QLEDs with extremely low operational lifetimes. The large barrier for electron injection also limits the electroluminescence efficiency. Here, we report one solution to all the above-mentioned problems. Owing to the strong HO−SnO 2 coordination and the steric effect provided by the hydrocarbon groups, tetramethylammonium hydroxide can stabilize SnO 2 NPs in alcohol, while its intrinsic dipole induces a favorable electronic-level shift for charge injection. The SnO 2 -based devices, with the conventional structure, exhibit not only the most efficient electroluminescence among ZnO-free QLEDs but also an operational lifetime (T 95 ) over 3200 h at 1000 cd m −2 , which is comparable with that of state-of-the-art ZnO-based devices. More importantly, the superior shelf stability means that the TMAH−SnO 2 NPs are promising to enable QLEDs with real stability.

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SnO2-anchored carbon fibers chemical vapor deposition (CVD) synthesis: effects of growth parameters on morphologies and electrochemical behaviors

Nguyen

Yan

et al. 2020

J Mater Sci

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A systematic study of the nitridation of SnO2 nanowires grown by the vapor liquid solid mechanism

Cited by 10 publications

References 28 publications

High-Temperature Pb Doping of SnO₂ and Growth Limitations of Pb_xSn_1–xO₂ Nanowires Versus Low-Temperature Growth of Pb_xSn_1–xO for Energy Storage and Conversion

High-Temperature Pb Doping of SnO₂ and Growth Limitations of Pb_xSn_1–xO₂ Nanowires Versus Low-Temperature Growth of Pb_xSn_1–xO for Energy Storage and Conversion

Highly Stable SnO₂-Based Quantum-Dot Light-Emitting Diodes with the Conventional Device Structure

SnO2-anchored carbon fibers chemical vapor deposition (CVD) synthesis: effects of growth parameters on morphologies and electrochemical behaviors

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A systematic study of the nitridation of SnO2 nanowires grown by the vapor liquid solid mechanism

Cited by 10 publications

References 28 publications

High-Temperature Pb Doping of SnO2 and Growth Limitations of PbxSn1–xO2 Nanowires Versus Low-Temperature Growth of PbxSn1–xO for Energy Storage and Conversion

High-Temperature Pb Doping of SnO2 and Growth Limitations of PbxSn1–xO2 Nanowires Versus Low-Temperature Growth of PbxSn1–xO for Energy Storage and Conversion

Highly Stable SnO2-Based Quantum-Dot Light-Emitting Diodes with the Conventional Device Structure

SnO2-anchored carbon fibers chemical vapor deposition (CVD) synthesis: effects of growth parameters on morphologies and electrochemical behaviors

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High-Temperature Pb Doping of SnO₂ and Growth Limitations of Pb_xSn_1–xO₂ Nanowires Versus Low-Temperature Growth of Pb_xSn_1–xO for Energy Storage and Conversion

High-Temperature Pb Doping of SnO₂ and Growth Limitations of Pb_xSn_1–xO₂ Nanowires Versus Low-Temperature Growth of Pb_xSn_1–xO for Energy Storage and Conversion

Highly Stable SnO₂-Based Quantum-Dot Light-Emitting Diodes with the Conventional Device Structure