2021
DOI: 10.1016/j.tsf.2021.138542
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A systematic approach to reduce non idealities in pentacene bottom-contact bottom-gate transistors

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Cited by 2 publications
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“…Figure 14 is depicting the comparison of few bottom gate top contact structures (S 1 -S 7 ). [149][150][151][152][153][154][155][156][157] These structures are outlined in terms of I D and μ. Here, S 2 and S 6 are showing the maximum and minimum drain current as 80 and 3.7 μA.…”
Section: Organic Thin Film Transistormentioning
confidence: 99%
“…Figure 14 is depicting the comparison of few bottom gate top contact structures (S 1 -S 7 ). [149][150][151][152][153][154][155][156][157] These structures are outlined in terms of I D and μ. Here, S 2 and S 6 are showing the maximum and minimum drain current as 80 and 3.7 μA.…”
Section: Organic Thin Film Transistormentioning
confidence: 99%