A systematic approach to modeling of power semiconductor devices based on charge control principles

Ma, Chao; Lauritzen, P.O.; Lin, Pao-Yi; Budihardjo, I.; Sigg, J.

doi:10.1109/pesc.1994.349753

Cited by 56 publications

(23 citation statements)

References 9 publications

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“…Taking derivatives, we can now define a dielectric capacitance (16) and electron and hole charge-storage capacitances at each node (17) (18) The integral Poisson equation (6), combined with the definitions (16)- (18), now reads as follows: (19) where lowercase symbols denote small-signal voltages. (In the derivation of (19), the time derivative has been omitted, assuming that the small signals have zero dc values.)…”

Section: Branch-constitutive Equationsmentioning

confidence: 99%

“…(In the derivation of (19), the time derivative has been omitted, assuming that the small signals have zero dc values.) Equation (19) is the Kirchhoff current equation for the middle node in the circuit of Fig. 2.…”

Section: Branch-constitutive Equationsmentioning

confidence: 99%

“…The direct use of device simulation to compute element values sets the present treatment apart from techniques such as Linvill's Lumped Parameter approach [13], [19], [20] and Schilling's Regional Approximation Method [21]-[24] which rely on analytical formulations for each of the device regions. Our extraction technique can be directly extended to twoand three-dimensional (3-D) physical models of arbitrary complexity, including nonuniform doping profiles, hot-carrier and quantum-mechanical effects, as long as a small-signal dc solution is available from a numerical device simulator.…”

Section: Derivation Of Circuit Elements From Device Simulationmentioning

confidence: 99%

See 2 more Smart Citations

Generation of equivalent circuits from physics-based device simulation

Pacelli

Mastrapasqua²,

Luryi

2000

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

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Section: Branch-constitutive Equationsmentioning

confidence: 99%

Section: Branch-constitutive Equationsmentioning

confidence: 99%

Section: Derivation Of Circuit Elements From Device Simulationmentioning

confidence: 99%

See 1 more Smart Citation

Generation of equivalent circuits from physics-based device simulation

Pacelli

Mastrapasqua²,

Luryi

2000

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

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“…Several research groups throughout the world have tried to advance the state of the art with respect to the status summarized in previous review articles [1], [2]. A number of new concepts for trimming the basic physical equations to the requirements of a power semiconductor device model for circuit simulation have been proposed [42], [43], [53], [69], [75], [101], [117], [119], [122], [129], [134], [140]. The special challenge in developing such models for circuit simulation results from the need to simultaneously fulfill contradicting requirements like high quantitative accuracy, low demand of computation power, and physical and easy accessible model parameters.…”

mentioning

confidence: 99%

Status and trends of power semiconductor device models for circuit simulation

Kraus

Mattausch

1998

IEEE Trans. Power Electron.

110

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Abstract-The current status of research in the field of power semiconductor device models is reviewed. For this purpose, the basic modeling problems and research issues, which have to be overcome in this field, are discussed. Recently, some new and quite promising modeling concepts have been proposed, which are compared with more traditional ways of achieving an efficient tradeoff between the necessary accuracy, required simulation speed, and feasibility of parameter determination. From this comparison, a prediction of the future evolution of circuit simulation models for power semiconductor devices naturally emerges. Many of the different concepts are expected to survive only in an application niche, where their specific points of strength are important. However, three modeling concepts have already been proven to be successfully applicable to the complete spectrum of power semiconductor devices and have their strength for different grades of complexity of the power circuit. A revolutionary development from anticipated or longdue breakthroughs is on the other hand not expected in the foreseeable future.

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“…Unlike most physics-based models that utilize a large number of internal device geometry and doping parameters, the lumped charge modeling technique reduces the complexity while retaining the internal carrier transport processes and basic structural information of the device [9]. The lumped charge approach discretizes a device structure into several critical regions.…”

Section: B Lumped-charge Diodementioning

confidence: 99%

An SCR-GTO model designed for a basic level of model performance

Wong

Lauritzen²,

Venkata³

et al.

IAS '96. Conference Record of the 1996 IEEE Industry Applications Conference Thirty-First IAS Annual Meeting

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-The SCR-GTO model in this paper is specifically designed to meet the performance features proposed for the basic performance level. An innovative and unique QuasiPhysical modeling technique combines a behavioral switch model and a physical diode model to avoid the convergence difficulties which can occur when regenerative thyristor models are used. A standard benchmark circuit is proposed for validating the switching performance of SCR and GTO models.

show abstract

A systematic approach to modeling of power semiconductor devices based on charge control principles

Cited by 56 publications

References 9 publications

Generation of equivalent circuits from physics-based device simulation

Generation of equivalent circuits from physics-based device simulation

Status and trends of power semiconductor device models for circuit simulation

An SCR-GTO model designed for a basic level of model performance

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