A surface silylated single‐layer resist based on limited gas permeation

Mitsui, Hideaki; Mizuno, Katsuhiko; Ueno, Nobuo; Sugita, Kazuyuki

doi:10.1002/pen.760322017

Cited by 2 publications

(3 citation statements)

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“…Poly(TBDMSOSt) was over 10 times more sensitive than tert-butyldimethylsilylated PHS, which had M w ϭ 4.08 ϫ 10 4 and M w /M n ϭ 3.81, while they possessed nearly the same ␥ values. Such a high sensitivity of poly(TBDMSOSt) was attributed to the high molecular weight of the polymer.…”

Section: ϫ2mentioning

confidence: 83%

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Silylated poly(4-hydroxystyrene)s as negative electron beam resists

Shinoda

Yoshikawa

Nishiwaki

et al. 1998

J. Appl. Polym. Sci.

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Silylated poly(4-hydroxystyrene)s and radical polymerized 4-tert-butyldimethylsilyloxystyrene (TBDMSOSt) were examined as electron beam resists. Commercial poly(4-hydroxystyrene) (PHS) with M w ϭ 1.69 ϫ 10 4 and M w /M n ϭ 5.41 was silylated with 1-(trimethylsilyl)imidazole and tert-butylchlorodimethylsilane. Both silylation reactions proceeded quantitatively to afford trimethylsilylated PHS with M w ϭ 3.93 ϫ 10 4 and M w /M n ϭ 4.91, and tert-butyldimethylsilylated PHS with M w ϭ 4.08 ϫ 10 4 and M w /M n ϭ 3.81. These 2 silyl ether polymers acted as a negative working resist to electron beam (EB) exposure. Sensitivity and contrast of tertbutyldimethylsilylated PHS were not affected by prebake temperature around its T g of 97°C, while those of PHS were dependent on prebake temperature around its T g of 160°C. At a prebake temperature of 125°C, the sensitivity parameter D g 0.5 and the contrast ␥ value were obtained as follows: 3.93 ϫ 10 Ϫ4 C cm Ϫ2 and 0.91 for PHS; 1.49 ϫ 10 Ϫ4 C cm Ϫ2 and 1.06 for trimethylsilylated PHS; 1.84 ϫ 10 Ϫ4 C cm Ϫ2 and 1.44 for tert-butyldimethylsilylated PHS. The silylation procedures obviously improved the sensitivity of PHS. TBDMSOSt was polymerized in bulk at 60°C with 2,2Ј-azobisisobutyronitrile (AIBN) as an initiator. The resultant poly(TBDMSOSt) possessed M w ϭ 3.01 ϫ 10 5 and M w /M n ϭ 1.92 and exhibited a sensitivity D g 0.5 of 1.60 ϫ 10 Ϫ5 C cm Ϫ2 and a ␥ value of 1.47. More than 10 times enhancement of sensitivity was observed compared with tert-butyldimethylsilylated PHS. Such a high sensitivity is probably due to the high molecular weight of the bulk polymerized material. Poly(TBDMSOSt) resolved an isolated line of 0.20 m width and 0.5 m line and space patterns.

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Section: ϫ2mentioning

confidence: 83%

“…2,3 A dry-developed resist process of utilizing vapor phase silylation of poly(4-hydroxystyrene) combined with oxygen reactive ion etching (O 2 RIE) has also been proposed. 4 However, the silyl ether polymers of poly(4-hydroxystyrene ) have not yet been examined for EB lithography.…”

Section: Introductionmentioning

confidence: 99%

Silylated poly(4-hydroxystyrene)s as negative electron beam resists

Shinoda

Yoshikawa

Nishiwaki

et al. 1998

J. Appl. Polym. Sci.

View full text Add to dashboard Cite

show abstract

“…2,3 A dry-developed resist process of utilizing vapor phase silylation of poly(4hydroxystyrene) combined with oxygen reactive ion etching (O 2 RIE) has also been proposed. 4 However, the silyl ether polymers of poly(4-hydroxystyrene ) have not yet been examined for EB lithography.…”

Section: Introductionmentioning

confidence: 99%