A Surface Silylated Single‐layer Resist Based on Limited Gas Permeation for Limited Penetration EB Lithography

Abstract

One single thick layer of resist polymer was surface-silylated to get a bilevel structure which functioned similarly to the bilayer resist composed of the Si-containing top imaging and the bottom planarizing layers. A resist or matrix polymer layer containing phenolic --OH groups was silylated by exposing to hexamethyl disilazane vapor, and Si atoms were effectively incorporated in the surface sublayer by limited gas permeation and reaction with the --OH groups. 02 RIE durability of the silylated poly(vinyl phenol) (PVP) or a commercial positive-working EB resist, RE-5000P, was more than 10 times as high as that of PVP or RE-5000P before silylation. The surface silylated single-layer resist derived from RE-5000P of 1.3 ~m thick was flood-exposed through a mesh mask to 11.7 ~C/cm 2 of 4 keV electrons, developed with alkaline in aqueous methanol, and plasma-developed in an 02 RIE chamber to form a positive-tone relief image on a bare Si substrate. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 147.188.128.74 Downloaded on 2015-06-02 to IP

A Surface-Silylated Single-Layer Resist Using Chemical Amplification: A New Simpler Alternative for Multilayer Resist System.

“…The durability of the silylated PVP layer was 23 during the first 38-40 min, and then suddenly decreased to 1.0 of SSS Resist based on (the etching rate increased and was equal to that of unsilylated layer). when the distribution of incorporated silicon atoms was considered as was discussed in the previous papers [1,3], it was obvious that the rate increase was caused by a decrease in S i content.…”

“…The PVP layer was placed on the holder in the home-made reactor reported in our previous study [3], kept in vacuo at 40°C for 20 h, and then silylated by introducing hexamethyldisilazane (HMDS) vapor under 80100 Torr into the chamber at 70°C for 2040 min.…”