A Surface Potential-Based Compact Model of n-MOSFET Gate-Tunneling Current

Gu, Xiaoxiong; Chen, Ten-Lon; Gildenblat, G.; Workman, G.O.; Veeraraghavan, S.; Shapira, Shachar; Stiles, K.

doi:10.1109/ted.2003.820652

Cited by 46 publications

(19 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure 11 shows good agreement between our proposed compact model of DT gate current and another two sets of experimental data. In Figure 11(a), experimental data is taken from Yang et al [4], and in Figure 11(b), experimental data is taken from Gu et al [7]. The results show that our proposed compact model results in an accurate simulation of J − V g characteristics and states the usefulness of the model presented in this work.…”

Section: Resultsmentioning

confidence: 68%

See 1 more Smart Citation

A physically based, accurate compact model of direct tunneling gate current considering quantum mechanical effects in nanoscale metal‐oxide‐semiconductor field‐effect transistors

Karim

Khosru

2011

Int J Numerical Modelling

View full text Add to dashboard Cite

SUMMARY We present a physically based, accurate model of the direct tunneling gate current of nanoscale metal‐oxide‐semiconductor field‐effect transistors considering quantum mechanical effects. Effect of wave function penetration into the gate dielectric is also incorporated. When electrons tunnel from the metal oxide semiconductor inversion layer to the gate, the eigenenergies of the quasi‐bound states turn out to be complex quantities. The imaginary part of these complex eigenenergies, Γij, are required to estimate the finite lifetimes of these states. We present an empirical equation of Γij as a function of surface potential. Inversion layer electron concentration is determined using eigenenergies, calculated by modified Airy function approximation. Hence, a compact model of direct tunneling gate current is proposed using a novel approach. Good agreement of the proposed compact model with self‐consistent numerical simulator and published experimental data for a wide range of substrate doping densities and oxide thicknesses states the accuracy and robustness of the proposed model. The proposed model can well be extended for devices with high‐κ/stack gate dielectrics introducing necessary modifications. Copyright © 2011 John Wiley & Sons, Ltd.

show abstract

Section: Resultsmentioning

confidence: 68%

“…Figure shows good agreement between our proposed compact model of DT gate current and another two sets of experimental data. In Figure (a), experimental data is taken from Yang et al , and in Figure (b), experimental data is taken from Gu et al .…”

Section: Resultsmentioning

confidence: 99%

A physically based, accurate compact model of direct tunneling gate current considering quantum mechanical effects in nanoscale metal‐oxide‐semiconductor field‐effect transistors

Karim

Khosru

2011

Int J Numerical Modelling

View full text Add to dashboard Cite

show abstract

“…In PSP [77,108], the gate to channel current is obtained with the assumption that the electrons tunnel with the kinetic energy of E q q V G V T t ox t…”

Section: Gate Tunneling Currentmentioning

confidence: 99%

“…Gu et al [108] proposed a surface potential-based gate current compact model for nMOSFETs which is a simplified version of the Esaki-Tsu formula [103] developed to find tunneling current density. This model considers the surface potential both in the channel and the source/drain regions and uses less number of adjustable parameters to match the model results with the experimental data.…”

Section: Gate Tunneling Currentmentioning

confidence: 99%

Quantum Mechanical Effects in Bulk MOSFETs from a Compact Modeling Perspective: A Review

Srikantaiah

DasGupta

2012

IETE Tech Rev

View full text Add to dashboard Cite

In this paper, the quantum mechanical (QM) effects in bulk MOSFETs and their modeling approaches in the compact modeling framework are reviewed. As the device dimensions are scaled to the sub-100 nm range, QM effects affect the device properties, such as effective oxide thickness, inversion layer charge density and profile, threshold voltage, effective bandgap, gate capacitance, mobility, surface potential, subthreshold characteristics, drain current, and gate leakage current. The classical theory is no longer sufficient for accurate modeling of these device characteristics. In this paper, models which have incorporated QM effects to obtain the device characteristics are discussed and compared. The roles of QM effects in affecting some of the device properties are also presented. KeywordsBulk MOSFETs, Quantum mechanical effect, Review on compact modeling. ( ) , which is used to solve eqn. (1) by numerical methods. Only certain energy levels, denoted by E ij , satisfy the Schrödinger equation and correspond to the energy levels of the sub-bands. Here, i=L for the lower valley and i=H for the higher valley, while j=0, 1, 2, 3…, corresponds the sub-band number. The electron concentration n y IETE TECHNICAL REVIEW | VOL 29 | ISSUE 1 | JAN-FEB 2012 AUTHORS Jayadeva Gowrapura Srikantaiah received the B.E. degree in electronics and communication engineering from NMAM Institute of Technology, Nitte, in 1990, M.Tech degree in digital electronics and advanced communication from the Karnataka Regional Engineering College, Surathkal (Present NITK), in 1995, both were affiliated to Mangalore University, India and Ph.D degree from I.I.T. Madras in 2010. His Ph.D. dissertation was on analytical models incorporating quantum mechanical effects for short n-channel MOSFETS. He joined as a lecturer in NMAM Institute of Technology, Nitte, in 1990 and later as Assistant Professor at JNNCE Shimoga in 1998. He has been a Faculty member in the department of electronics and communication engineering, Nagarjuna College of Engineering and Technology, Bangalore, since September 2010 and is currently a Professor and Head. His research interests are modeling and simulation of bulk and SOI MOSFETs including quantum mechanical effects and low power VLSI design.

show abstract

“…To obtain an analytical expression of I EVB , the surface potential dependence of transmission coefficient is approximated as [26] …”

Section: Gate-to-body Tunneling Currentmentioning

confidence: 99%

PSP-SOI: A Surface Potential Based Compact Model of Partially Depleted SOI MOSFETs

Gildenblat

et al. 2007

2007 IEEE Custom Integrated Circuits Conference

Self Cite

View full text Add to dashboard Cite

This paper reports recent progress on partially depleted (PD) SOI modeling using a surface potential based approach. The new model, called PSP-SOI, is formulated within the framework of the latest industry standard bulk MOSFET model PSP. In addition to its physics-based formulation and scalability inherited from PSP, PSP-SOI captures SOI specific effects by including a floating body simulation capability, a parasitic bipolar model, and self-heating. A nonlinear body resistance is included for modeling body-contacted SOI devices. The PSP-SOI model has been extensively tested on several PD/SOI technologies.

show abstract

A Surface Potential-Based Compact Model of n-MOSFET Gate-Tunneling Current

Cited by 46 publications

References 25 publications

A physically based, accurate compact model of direct tunneling gate current considering quantum mechanical effects in nanoscale metal‐oxide‐semiconductor field‐effect transistors

A physically based, accurate compact model of direct tunneling gate current considering quantum mechanical effects in nanoscale metal‐oxide‐semiconductor field‐effect transistors

Quantum Mechanical Effects in Bulk MOSFETs from a Compact Modeling Perspective: A Review

PSP-SOI: A Surface Potential Based Compact Model of Partially Depleted SOI MOSFETs

Contact Info

Product

Resources

About