A surface micromachined pressure sensor based on polysilicon nanofilm piezoresistors

Wang, Jian; Chuai, Rongyan; Yang, Lü; Dai, Qing

doi:10.1016/j.sna.2015.03.008

Cited by 21 publications

(6 citation statements)

References 21 publications

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“…Considering the diaphragm size, the sensitivity is higher than the previous surface micromachined pressure sensors [7]- [9]. For the circular diaphragm, the diaphragm area is 78% smaller than the rectangular diaphragm, but the sensitivity is 23.6% larger.…”

Section: Resultsmentioning

confidence: 74%

“…They also have the problem of wafer-to-wafer bonding for a sealed cavity, which requires an additional bonding area. Owing to these problems of bulk micromachined pressure sensors, surface micromachined pressure sensors have recently been developed [7]- [9]. A surface micromachined pressure sensor uses polysilicon as a sensing piezoresistor and surface sealed cavity fabricated on a substrate.…”

Section: Introductionmentioning

confidence: 99%

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Surface Micromachined Pressure Sensor with Substrate Internal Vacuum Cavity

Je¹,

Choi²,

Lee³

et al. 2016

ETRI J

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A surface micromachined piezoresistive pressure sensor with a novel internal substrate vacuum cavity was developed. The proposed internal substrate vacuum cavity is formed by selectively etching the silicon substrate under the sensing diaphragm. For the proposed cavity, a new fabrication process including a cavity side‐wall formation, dry isotropic cavity etching, and cavity vacuum sealing was developed that is fully CMOS‐compatible, low in cost, and reliable. The sensitivity of the fabricated pressure sensors is 2.80 mV/V/bar and 3.46 mV/V/bar for a rectangular and circular diaphragm, respectively, and the linearity is 0.39% and 0.16% for these two diaphragms. The temperature coefficient of the resistances of the polysilicon piezoresistor is 0.003% to 0.005% per degree of Celsius according to the sensor design. The temperature coefficient of the offset voltage at 1 atm is 0.0019 mV and 0.0051 mV per degree of Celsius for a rectangular and circular diaphragm, respectively. The measurement results demonstrate the feasibility of the proposed pressure sensor as a highly sensitive circuit‐integrated pressure sensor.

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Section: Resultsmentioning

confidence: 74%

Section: Introductionmentioning

confidence: 99%

Surface Micromachined Pressure Sensor with Substrate Internal Vacuum Cavity

Je¹,

Choi²,

Lee³

et al. 2016

ETRI J

View full text Add to dashboard Cite

show abstract

“…With the booming of control science and intelligent monitoring technology, the pressure sensor technology in extreme environments such as engines and oil drilling has received extensive attention from scholars [ 1 , 2 ]. Compared with capacitive, optical fiber, surface acoustic wave, and other types of sensors, piezoresistive pressure sensors have the advantages of the easiness of design configuration, small size, simple processing technology, and the wider linearity range [ 3 , 4 , 5 ]. Owing to the excellent piezoresistive effect of silicon (Si) and mature Si-based micro-electromechanical system (MEMS) processing technology, pressure sensors based on the Si-piezoresistive effect are currently the most commonly used.…”

Section: Introductionmentioning

confidence: 99%

Study on the Stability of the Electrical Connection of High-Temperature Pressure Sensor Based on the Piezoresistive Effect of P-Type SiC

Liang

Cheng

et al. 2021

Micromachines

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In this study, a preparation method for the high-temperature pressure sensor based on the piezoresistive effect of p-type SiC is presented. The varistor with a positive trapezoidal shape was designed and etched innovatively to improve the contact stability between the metal and SiC varistor. Additionally, the excellent ohmic contact was formed by annealing at 950 °C between Ni/Al/Ni/Au and p-type SiC with a doping concentration of 1018cm−3. The aging sensor was tested for varistors in the air of 25 °C–600 °C. The resistance value of the varistors initially decreased and then increased with the increase of temperature and reached the minimum at ~450 °C. It could be calculated that the varistors at ~100 °C exhibited the maximum temperature coefficient of resistance (TCR) of ~−0.35%/°C. The above results indicated that the sensor had a stable electrical connection in the air environment of ≤600 °C. Finally, the encapsulated sensor was subjected to pressure/depressure tests at room temperature. The test results revealed that the sensor output sensitivity was approximately 1.09 mV/V/bar, which is better than other SiC pressure sensors. This study has a great significance for the test of mechanical parameters under the extreme environment of 600 °C.

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“…The piezoresistive pressure sensors were first demonstrated by Tufte et al in the 1960s [1] by using KOH etching. They may be made by bulk micromachining [2,3] or surface micromachining [4,5]. Also, wide-band gap semiconductors based piezoresistive pressure sensors have been proposed for hostile environments [6,7].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of a Piezoresistive Barometric Pressure Sensor by a Silicon-on-Nothing Technology

Zhang

Guoping

et al. 2019

Journal of Sensors

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This paper presents a piezoresistive barometric pressure sensor fabricated by using a Silicon-on-Nothing (SON) technology. Array of silicon trenches were annealed in hydrogen environment to form continuing crystalline silicon membrane over a vacuum cavity. Epitaxial growth on the silicon membrane is then completed for the desired thickness. All processes are CMOS compatible and performed on the front side of the silicon wafer. The piezoresistive barometric pressure sensor has been demonstrated with pressure hysteresis as low as 0.007%.

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A surface micromachined pressure sensor based on polysilicon nanofilm piezoresistors

Cited by 21 publications

References 21 publications

Surface Micromachined Pressure Sensor with Substrate Internal Vacuum Cavity

Surface Micromachined Pressure Sensor with Substrate Internal Vacuum Cavity

Study on the Stability of the Electrical Connection of High-Temperature Pressure Sensor Based on the Piezoresistive Effect of P-Type SiC

Fabrication of a Piezoresistive Barometric Pressure Sensor by a Silicon-on-Nothing Technology

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