A superlattice solar cell for enhanced current output and minimized drop in open-circuit voltage under sunlight concentration

Wang, Yunpeng; Watanabe, Kentaroh; Sodabanlu, Hassanet; Mao, Shaojun; Fujii, Hiromasa; Toprasertpong, Kasidit; Sugiyama, Masakazu; Nakano, Yoshiaki

doi:10.1109/pvsc.2013.6744163

Cited by 2 publications

(2 citation statements)

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“…These carrier collection problems could be solved by promoting electronic coupling between the QWs, i.e., transforming the MQW structure into a SL. In this case, the formation of minibands would actively facilitate carrier transport across the structure [120]. As described in the previous Section, a type-II band alignment could give rise to enhanced carrier collection efficiency, so type II SL structures are particularly interesting to be investigated regarding possible application of QW-like structures in MJSCs.…”

Section: Quantum Wells and Superlattices For Solar Cellsmentioning

confidence: 99%

“…However, the advantages provided by MQW solar cells can be suppressed because of an inefficient carrier collection process: the carrier extraction from and transport across the MQW structure may be hindered due to carrier confinement, which leads to recombination of the photogenerated carriers [119], also degrading the V OC [120].…”

Section: Quantum Wells and Superlattices For Solar Cellsmentioning

confidence: 99%

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Structures based on GaAs(Sb)(N) semiconductor alloys for high efficiency multi-junction solar cells

Martín¹

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III-V multi-junction solar cells (MJSCs) have hold record conversion efficiencies for many years, which is currently approaching 50 %. Theoretical efficiency limits are calculated using optimum designs with the right lattice constant-bandgap energy combination, which requires a 1.0-1.15 eV bandgap semiconductor material lattice-matched to GaAs/Ge. Insertion of such a material layer in a 4-junction MJSC could lead to an efficiency of 60 % under solar concentration, which would represent a significant breakthrough in photovoltaics. Therefore, 1.0-1.15 eV bandgap materials that can be grown lattice-matched to GaAs/Ge are being nowadays intensively researched. Pero la vida no se acaba (ni empieza) en el ISOM. También quisiera agradecer a los profesores que a lo largo del camino me metieron el gusanillo por la ciencia y a las personas xii con las que di mis primeros pasos en el mundo de la investigación: Bianchi Méndez, Emilio Nogales y Alberto Moure. Al Ministerio de Economía y Competitividad por concederme la beca FPI 2014 (BES-2014-068130) que ha permitido la realización de esta tesis, y a todos los que con su trabajo han contribuido a su desarrollo: el

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Section: Quantum Wells and Superlattices For Solar Cellsmentioning

confidence: 99%

Section: Quantum Wells and Superlattices For Solar Cellsmentioning

confidence: 99%