A substrate-dependent CAD model for ceramic multilayer capacitors

Lakshminarayanan, Balaji; Gordon, H.C.; Weller, Thomas M.

doi:10.1109/22.873896

Cited by 24 publications

(13 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The resonant line is designed to have a high Q-factor and is given by the classical transmission line theory as in [4,5];…”

Section: Effective Series Resistance (Esr)mentioning

confidence: 99%

“…The Q-factor at the test frequency (Q o ) is obtained by using the Q-factor (Q o`) at the natural frequency and is given by [4,5];…”

Section: Effective Series Resistance (Esr)mentioning

confidence: 99%

“…The TSVs that transmit signals between two stacked dies are considered transmission lines, and the effective series resistance of the substrate is calculated with the resonant line technique and modeled with a two-polynomial equation. The series resistance of the capacitor is given by [4,5]; (1)…”

Section: Effective Series Resistance (Esr)mentioning

confidence: 99%

See 2 more Smart Citations

3-D Copper based TSV for 60-GHz applications

Kannan

Evana

Gupta

et al. 2011

2011 IEEE 61st Electronic Components and Technology Conference (ECTC)

View full text Add to dashboard Cite

This paper presents modeling, simulation and experimental measurements of copper-based TSV for 60-GHz applications. We have considered different via dimensions for modeling and simulations and performed simulations to validate electrical performance of the TSV with varying data rates in addition to providing eye diagram analysis. To validate the electrical model, we performed TSV characterization by fabricating an interconnect using copper material on a silicon substrate. IntroductionThrough Silicon Vias (TSVs) have attracted increasing interest in the computer, circuits and devices, and packaging communities due to their shorter vertical interconnect path, resulting in lower parasitic losses, reduced power consumption, higher I/O density and improved system performance. TSVs, which can be fabricated on individual wafers and vertically interconnected, play a critical role in integrating heterogeneous technologies. They are particularly attractive for next-generation consumer and computing applications that demand faster signal processing speed, ultrahigh I/O density, smaller foot-print area, improved electrical performance and reliability.Continuously evolving interconnect technology has been a major factor complementing the 3-D integration scheme and has contributed significantly to the realization of high-density and multifunctional microelectronics [1]. Low-cost, reliable via formation technologies, proper choice of materials for via filling and innovative design solutions that address electrical and thermal issues must now be rigorously investigated [1,2]. Along with the need for low-cost and high-yield process technology, the successful application of TSV technology should be accompanied by optimal electrical design. The electrical design of TSV interconnections requires careful consideration of complex electrical behavior. Through silicon vias are fabricated in lossy silicon substrates and are exposed to coupling, distortion and additional losses [3]. When TSVs are used for high frequency applications, SiO 2 cannot be used as an insulating layer due to its high fringing capacitance. Instead a polymer like benzocyclobutane (BCB) is used as an insulating layer, and a conformal coating is achieved by using a deep reactive ion etching process. Therefore, it is of utmost importance to obtain an electrical model of TSV by considering different modeling constraints to achieve an optimal design solution.For wireless applications, designers and engineers are exploring the 60-GHz band to utilize the advantages it offers over current frequency bands. The 60-GHz band is an unlicensed band featuring a large bandwidth that allows a large number of bits to be transmitted at a faster rate.

show abstract

“…The resonant line is designed to have a high Q-factor and is given by the classical transmission line theory as in [4,5];…”

Section: Effective Series Resistance (Esr)mentioning

confidence: 99%

“…The Q-factor at the test frequency (Q o ) is obtained by using the Q-factor (Q o`) at the natural frequency and is given by [4,5];…”

Section: Effective Series Resistance (Esr)mentioning

confidence: 99%

See 1 more Smart Citation

3-D Copper based TSV for 60-GHz applications

Kannan

Evana

Gupta

et al. 2011

2011 IEEE 61st Electronic Components and Technology Conference (ECTC)

View full text Add to dashboard Cite

show abstract

“…This is because the multilayer capacitors in an LTCC BPF are usually of so large a value as to cause the obvious series and higher order resonance effects [18], [24] in the frequency range of interest. It might be thought that the equivalent circuits, as suggested in [24], for modeling the multilayer capacitors with series and higher order resonances can be included. However, this makes the extraction of the equivalent-circuit elements from the measured -parameters become a formidable task.…”

Section: Evolution Of Bpf Prototypementioning

confidence: 99%

“…7. The formulation can be described as (22) where (23) After substituting (23) into (22), one can solve for , from the following set of equations: (24) where (25) A side advantage using the response deserves to be mentioned that the frequencies at which becomes zero correspond to the parallel or series resonant frequencies of . This provides a fast way of getting those resonant frequencies data for extracting the reactive elements in the resonant circuit.…”

Section: Direct Extractionmentioning

confidence: 99%

A Broadband Single-Stage Equivalent Circuit for Modeling LTCC Bandpass Filters

Tsai

Horng

2006

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

Abstract-A single-stage equivalent circuit is proposed to model microwave bandpass filters (BPFs) fabricated in low-temperature co-fired ceramic (LTCC) technology up to several times its passband frequency. The equivalent circuit adopts a modified T topology with the expandable multilayer resonators to achieve an extremely large bandwidth. It can be efficiently established from the measured -parameters using direct extraction or rational approximation. As a result, the modeled -parameters for a 2.45-GHz wideband local area network (WLAN) LTCC BPF show good agreement with the measured results over a wide frequency range up to 8.5 GHz. Such a broadband model can be used to accurately predict the suppression of harmonics and interferences in system simulation of the WLAN front-end modules.Index Terms-Equivalent-circuit model, low-temperature co-fired ceramic (LTCC) bandpass filter (BPF), wideband local area network (WLAN) BPF.

show abstract