A Sub-mW 18-MHz MEMS Oscillator Based on a 98-dBΩ Adjustable Bandwidth Transimpedance Amplifier and a Lamé-Mode Resonator

CMOS-MEMS resonators have become a promising solution thanks to their miniaturization and on-chip integration capabilities. However, using a CMOS technology to fabricate microelectromechanical system (MEMS) devices limits the electromechanical performance otherwise achieved by specific technologies, requiring a challenging readout circuitry. This paper presents a transimpedance amplifier (TIA) fabricated using a commercial 0.35-µm CMOS technology specifically oriented to drive and sense monolithically integrated CMOS-MEMS resonators up to 50 MHz with a tunable transimpedance gain ranging from 112 dB to 121 dB. The output voltage noise is as low as 225 nV/Hz1/2—input-referred current noise of 192 fA/Hz1/2—at 10 MHz, and the power consumption is kept below 1-mW. In addition, the TIA amplifier exhibits an open-loop gain independent of the parasitic input capacitance—mostly associated with the MEMS layout—representing an advantage in MEMS testing compared to other alternatives such as Pierce oscillator schemes. The work presented includes the characterization of three types of MEMS resonators that have been fabricated and experimentally characterized both in open-loop and self-sustained configurations using the integrated TIA amplifier. The experimental characterization includes an accurate extraction of the electromechanical parameters for the three fabricated structures that enables an accurate MEMS-CMOS circuitry co-design.

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“…Table 1 compares this TIA design to prior works [ 14 , 17 , 24 , 25 , 26 , 27 ]. As stated earlier, in addition to the gain insensitivity to

, a significant advantage of the proposed solution features a tunable-gain option.…”

Section: Transimpedance Amplifiermentioning

confidence: 99%

A Tunable-Gain Transimpedance Amplifier for CMOS-MEMS Resonators Characterization

et al. 2021

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“…In recent times, small structural components like micro/nanoplates are extensively used in microelectromechanical systems (MEMS) and nanoelectromechanical systems (NEMS) attributable to its distinct and finest characteristics [1]. Micro/nano type rectangular plate based resonators are universally used for far-ranging applications such as in fields like energy harvesting [2,3], robotics [4,5], mass sensing [6,7], electronic filtering [8,9], communication systems [10,11], autonomous distribution systems [12,13], aerospace industry [14,15], navigation systems [16,17] etc.…”

Section: Introductionmentioning

confidence: 99%

Impacts of Length Scale Parameter on Material Dependent Thermoelastic Damping in Micro/nanoplates Applying Modified Coupled Stress Theory

Resmi

BABU

BAIJU

2022

mech

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Among the different energy dissipation mechanisms, thermoelastic damping plays a vital role and need tobe alleviated in resonators inorder to enhance its performance parameters by improving its thermoelastic dampinglimited qualityfactor, QTED. The maximum energy dissipation is also interrelated with critical length (???????? ) of theplates and by optimizing the dimensions the peaking of energy dissipation can be diminished. As the size of thedevices is scaled down, classical continuum theories are not able to explain the size effect related mechanicalbehavior at micron or submicron levels and as a result non-classical continuum theories are pioneered with theinception of internal length scale parameters. In this paper, analysis of isotropic rectangular micro-plates based onKirchhoff model applying Modified Coupled Stress Theory is used toanalyzethe size-dependent thermoelasticdamping and its impact on quality factor and critical dimensions.Hamilton principle is adapted to derive thegoverning equations of motion and the coupled heat conduction equation is employed to formulate the thermoelasticdamping limited quality factor of the plates. Five different structural materials (PolySi, Diamond,Si, GaAs andSiC)are used for optimizing QTED which depends on the materialperformance index parameters. ThermoelasticDamping Index [TDI] and thermal diffusion length, lT. According to this work, the maximum QTED is attained forPolySi with the lowest TDI and Lcmax is obtained for SiC which is having the lowest lT. The impact of lengthscaleparameters (l), vibration modes, boundary conditions (Clamped–Clamped and Simply Supported), and operatingtemperatures on QTED and Lcare also investigated. It is concluded that QTED is further maximized by selecting lowtemperatures and higher internal length scale parameters (l).The prior knowledge of QTED and Lchelp the designers tocome out with high performance low loss resonators.

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A 164-dBΩ Transimpedance Amplifier for Monolithic CMOS-MEMS Oscillators in Biosensing Applications

Perelló-Roig,

Barceló,

Verd

et al. 2024

IEEE Access

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This article presents a fully differential tunable high-gain transimpedance amplifier (TIA) conceived as front-end circuit for monolithic CMOS-MEMS resonators operating in self-sustained oscillation mode. The proposed solution is based on a capacitive feedback network topology using a varactor for gain control. The design is specifically oriented to CMOS-MEMS biosensing applications that require post-CMOS MEMS processing. The adoption of a TIA solution provides robustness against one of such processing steps (i.e., oxygen plasma activation) and a 10 improvement in feedthrough signal elimination compared to a single-ended alternative. The ASIC was fabricated using a 0.35-µm commercial CMOS technology from Austria Microsystems featuring a maximum transimpedance gain of 164 dBΩ with a 10-dB tuning range. It operates at frequencies up to 10 MHz with an input-referred current noise density as low as 13 fA•Hz -1/2 providing an exceptional high-performance sensing. With a 3.3 V supply voltage, it exhibits a 1.6 mW power consumption. The presented TIA was integrated on-chip with various MEMS resonator topologies, either oriented to volatile organic compounds (VOCs) detection or to microfluidics integration for Lab-on-Chip (LoC) systems, corroborating self-sustained oscillation with a 135-ppb measured Allan deviation and 1.1 V output voltage swing.INDEX TERMS CMOS-MEMS oscillator, transimpedance amplifier (TIA), Lab-on-Chip (LoC), ASIC. TABLE I LIST OF ABBREVIATIONS AND ACRONYMS USED IN THIS WORK

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A Sub-mW 18-MHz MEMS Oscillator Based on a 98-dBΩ Adjustable Bandwidth Transimpedance Amplifier and a Lamé-Mode Resonator

Cited by 7 publications

References 37 publications

A Tunable-Gain Transimpedance Amplifier for CMOS-MEMS Resonators Characterization

A Tunable-Gain Transimpedance Amplifier for CMOS-MEMS Resonators Characterization

Impacts of Length Scale Parameter on Material Dependent Thermoelastic Damping in Micro/nanoplates Applying Modified Coupled Stress Theory

A 164-dBΩ Transimpedance Amplifier for Monolithic CMOS-MEMS Oscillators in Biosensing Applications

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