A sub‐6GHz wideband low noise amplifier with high gain and low noise figure in 110‐nm SOI CMOS

Abstract

This letter presents a sub‐6 GHz wideband low noise amplifier (LNA) based on a double L‐type load network and utilizes the negative feedback technique. Using the cascode structure, along with the aforementioned techniques, it is possible to achieve a single‐stage wideband LNA with high gain and low noise figure (NF). Fabricated in 110‐nm SOI CMOS technology, the proposed LNA achieves a maximum power gain of 15.2 dB, noise figure of 1.0–1.56 dB. The 3‐dB bandwidth ranges from 3.05 to 4.55 GHz. The minimum power input at 1 dB compression point (IP1dB) is −17.1 dBm. The LNA area is 0.18 mm2 and dissipates a total power of 11.5 mW from a 1.4‐V power supply.

Low-Noise Amplifier with Bypass for 5G New Radio Frequency n77 Band and n79 Band in Radio Frequency Silicon on Insulator Complementary Metal–Oxide Semiconductor Technology

“…However, for Cascode low-noise amplifiers intended for 5G NR, where bandwidth limitations exist, techniques for bandwidth extension become essential to achieve the desired bandwidth. Various techniques, such as distributed, coupled/resistive feedback, series peaking, double L-type matching network, and gm-boosting, are employed for this purpose [ 6 , 7 , 8 , 9 , 10 , 11 ]. In the case of the representative RC feedback technique, the bandwidth of the low-noise amplifier is determined by the transistor’s Ft (transition frequency) and the feedback loop.…”

“…To address this issue, additional techniques are employed to minimize performance degradation. References [ 7 , 8 , 9 ] demonstrate excellent performance over a wide bandwidth but exhibit a high noise figure of 4.5 dB. Alternative methods, peaking techniques, involve additional components such as inductors or T-coils and serial/parallel connections for bandwidth extension.…”