A sub-400°C germanium MOSFET technology with high-κ dielectric and metal gate

Chui, Chi On; Kim, Hyoungsub; Chi, David; Triplett, B. B.; McIntyre, Paul C.; Saraswat, Krishna C.

doi:10.1109/iedm.2002.1175872

Cited by 85 publications

(37 citation statements)

References 8 publications

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“…For instance, the use of strained channel and change in channel direction 1,2 have been shown to enhance the carrier mobility. Another approach is to use high carrier mobility materials, such as Ge, 3,4 In 0.53 Ga 0.47 As, 5 and InP 6 for the transistor channel. Among these materials, Ge has been extensively studied due to its hole mobility four times higher and electron mobility two times higher than those of Si.…”

mentioning

confidence: 99%

Effect of threading dislocation density and dielectric layer on temperature-dependent electrical characteristics of high-hole-mobility metal semiconductor field effect transistors fabricated from wafer-scale epitaxially grown p-type germanium on silicon substrates

Ghosh

Leonhardt

Han

2014

Journal of Applied Physics

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Articles you may be interested inAu-gated SrTiO3 field-effect transistors with large electron concentration and current modulation Appl. Phys. Lett. 105, 113512 (2014); 10.1063/1.4896275 Fermi-level depinning at the metal-germanium interface by the formation of epitaxial nickel digermanide NiGe2 using pulsed laser anneal Hf O 2 -based InP n -channel metal-oxide-semiconductor field-effect transistors and metal-oxide-semiconductor capacitors using a germanium interfacial passivation layer Appl. Phys. Lett. 93, 102906 (2008); 10.1063/1.2961119High-speed GaAs metal gate semiconductor field effect transistor structure grown on a composite Ge ∕ Ge x Si 1 − x ∕ Si substrate

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mentioning

confidence: 99%

Effect of threading dislocation density and dielectric layer on temperature-dependent electrical characteristics of high-hole-mobility metal semiconductor field effect transistors fabricated from wafer-scale epitaxially grown p-type germanium on silicon substrates

Ghosh

Leonhardt

Han

2014

Journal of Applied Physics

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“…High-frequency (I-MHz) bidirectional C-V characteristics (not shown) suggest almost no C-V hysteresis (no more than 20 mV) and no kinks near the inversion region for all the samples , indicating there are almost neglectable near-interfacial slow oxide traps [14,15]. In addition , the bidirectional C-V curves seems almost not affected by different sputter deposition and PDA temperatures, suggesting such near-interfacial slow oxide traps would not be created by in situ annealing or PDA treatment in N 2 ambience.…”

Section: Resultsmentioning

confidence: 97%

Effects of sputtering and annealing temperatures on MOS capacitor with HftiOn gate dielectric

Wang¹,

Li²,

Leung³

et al. 2009

2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

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In this work, Al/HffiON/n-Si capacitors with different sputtering and annealing temperatures are studied. Larger accumulation capacitance and flat-band voltage are observed for samples with higher sputtering or post-deposition annealing temperature. Gate conduction mechanisms are only affected by sputtering temperature slightly. The flat-band voltage shift and interface-state density at midgap under high-field gate injection and substrate injection are investigated, and the results imply electron detrapping in the gate dielectric.

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“…In order to conquer these issues, highmobility channel materials and three-dimensional integrated circuits (3D ICs) have attracted much attention and been widely investigated for future devices and circuit architecture [2]. As for the next-generation device architecture, germanium (Ge) is widely considered to be one of attractive channel materials for next-generation device architectures because of its higher carrier mobility than Si [3]- [8]. Furthermore, Ge-based devices can typically be fabricated with a lower process temperature than for Si-based devices [9], [10].…”

Section: Introductionmentioning

confidence: 99%

Effects of Crystallinity on the Electrical Characteristics of Counter-Doped Polycrystalline Germanium Thin-Film Transistor via Continuous-Wave Laser Crystallization

Liao

et al. 2019

IEEE J. Electron Devices Soc.

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The crystallinity of polycrystalline germanium (poly-Ge) films were demonstrated through continuous-wave laser crystallization (CLC) with Gaussian-distribution beam profile. The different grain sizes of CLC poly-Ge were observed in their three crystallization regions, which were 2 μm, 680 nm, and 90 nm for the central, transition, and edge regions, respectively. Furthermore, the relation between crystallinity and carrier types in these three regions of counter-doped CLC poly-Ge films were investigated. In the central and transition regions, the CLC poly-Ge films with relatively low hole concentration were easily converted to n-type poly-Ge films through a counter-doping process. In contrast, the edge region with poor crystallinity exhibited p-type behavior due to high defect-generated hole concentration. According to these material properties of counter-doped CLC poly-Ge films, the corresponding transfer characteristics of p-channel poly-Ge thin-film transistor for three crystallization regions were further investigated. Subsequently, high-performance p-channel poly-Ge thin-film transistors in the central region exhibited a superior field-effect mobility of 792.2 cm 2 /V-s.INDEX TERMS Polycrystalline germanium (poly-Ge), continuous-wave laser crystallization (CLC), counter-doping (CD), thin-film transistor (TFT).

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A sub-400°C germanium MOSFET technology with high-κ dielectric and metal gate

Cited by 85 publications

References 8 publications

Effect of threading dislocation density and dielectric layer on temperature-dependent electrical characteristics of high-hole-mobility metal semiconductor field effect transistors fabricated from wafer-scale epitaxially grown p-type germanium on silicon substrates

Effect of threading dislocation density and dielectric layer on temperature-dependent electrical characteristics of high-hole-mobility metal semiconductor field effect transistors fabricated from wafer-scale epitaxially grown p-type germanium on silicon substrates

Effects of sputtering and annealing temperatures on MOS capacitor with HftiOn gate dielectric

Effects of Crystallinity on the Electrical Characteristics of Counter-Doped Polycrystalline Germanium Thin-Film Transistor via Continuous-Wave Laser Crystallization

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