A study on the role of surfactant on the layered growth of SnSe2 for electrical applications

Mary, T. A.; Fernández, Aniceto López; Sakthivel, P.; Jesudurai, Joe

doi:10.1007/s10854-016-5220-z

Cited by 9 publications

(5 citation statements)

References 28 publications

(31 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…remaining three peaks at 161.2, 188.4, and 216.1 cm −1 were attributed to the B 3g and A g vibration modes of SnS (position B1) [26,27] . Similarly, peaks corresponding to the E g and A 1g vibration modes of SnSe 2 (position C2), as well as the , B g , and vibration modes of SnSe (position B2) can be found in the Raman spectrum of the SnSe/SnSe 2 heterostructure (position A2) [19] .…”

Section: Resultsmentioning

confidence: 80%

“…The height profiles of the SnS/SnSe 2 heterostructure reveal that the individual SnS and SnSe 2 thin layers are 8 nm (~15 layers) and 9 nm (~12 layers) in thickness, respectively [4,18] . Meanwhile, the thicknesses of the SnSe and SnSe 2 in the SnSe/SnSe 2 heterostructure were determined to be 9 nm (~15 layers) and 8 nm (~12 layers), respectively [19] .…”

Section: Resultsmentioning

confidence: 99%

“…As members of the Ⅳ−Ⅵ compounds, tin mono-sulfide (SnS) and tin mono-selenide (SnSe) exhibit inherent p−type semiconductivity with an orthorhombic Sn−S (Se) layered structure [18,19] . Given their common metallic atoms, it is both feasible and convenient to realize p−n heterostructures of SnS/SnSe 2 and SnSe/SnSe 2 .…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Visible-to-near-infrared photodetectors based on SnS/SnSe₂ and SnSe/SnSe₂ p−n heterostructures with a fast response speed and high normalized detectivity

Zhu,

Duan,

Meng

et al. 2024

J. Semicond.

View full text Add to dashboard Cite

The emergent two-dimensional (2D) material, tin diselenide (SnSe2), has garnered significant consideration for its potential in image capturing systems, optical communication, and optoelectronic memory. Nevertheless, SnSe2-based photodetection faces obstacles, including slow response speed and low normalized detectivity. In this work, photodetectors based on SnS/SnSe2 and SnSe/SnSe2 p−n heterostructures have been implemented through a polydimethylsiloxane (PDMS)−assisted transfer method. These photodetectors demonstrate broad-spectrum photoresponse within the 405 to 850 nm wavelength range. The photodetector based on the SnS/SnSe2 heterostructure exhibits a significant responsivity of 4.99 × 103 A∙W−1, normalized detectivity of 5.80 × 1012 cm∙Hz1/2∙W−1, and fast response time of 3.13 ms, respectively, owing to the built-in electric field. Meanwhile, the highest values of responsivity, normalized detectivity, and response time for the photodetector based on the SnSe/SnSe2 heterostructure are 5.91 × 103 A∙W−1, 7.03 × 1012 cm∙Hz1/2∙W−1, and 4.74 ms, respectively. And their photodetection performances transcend those of photodetectors based on individual SnSe2, SnS, SnSe, and other commonly used 2D materials. Our work has demonstrated an effective strategy to improve the performance of SnSe2-based photodetectors and paves the way for their future commercialization.

show abstract

Section: Resultsmentioning

confidence: 80%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Visible-to-near-infrared photodetectors based on SnS/SnSe₂ and SnSe/SnSe₂ p−n heterostructures with a fast response speed and high normalized detectivity

Zhu,

Duan,

Meng

et al. 2024

J. Semicond.

View full text Add to dashboard Cite

show abstract

“…The occurrence of an extensive peak at 3401.50 cm −1 is related to OH − [35], and the absorption modes' presence in the range of 818-1525 cm −1 corresponds to chalcogenide bonding [36]. The intense vibration peak at 604.75 cm −1 might be attributed to the Sn-Se bonding [37]. The water that was absorbed from the air may be the cause of the absorption peak at 1667.88 cm −1 [38].…”

Section: Structural Analysismentioning

confidence: 98%

Synthesis, Characterization and Power Factor Estimation of SnSe Thin Film for Energy Harvesting Applications

Ahmad,

Almutairi,

Ali

et al. 2024

Processes

View full text Add to dashboard Cite

In this work, a simple, cost-effective successive ionic layer adsorption and reaction (SILAR) deposition technique has been used to deposit a high-quality tin selenide (SnSe) thin film onto a glass substrate. Structural, morphologic, and thermoelectric properties have been characterized for the prepared thin film. X-ray diffraction (XRD) results of the SnSe thin film reveal an orthorhombic structure phase. The morphological properties of the prepared thin films have been studied using field emission scanning electron microscopy (FESEM). The stoichiometric composition of the deposited thin film and the elemental binding energies of the Sn and Se elements have been investigated with energy-dispersive spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS). The Fourier transformation infrared (FTIR) spectrum of the SnSe thin film displays vibrational modes of chalcogenides bonds. These results suggest that the developed thin film is crystalline, uniform, and without impurities and is appropriate for energy harvesting applications. The prepared thin film’s Seebeck coefficient and electrical resistivity were estimated through ZEM-3 from room temperature to 600 K. The power factor was evaluated. A substantially high electrical conductivity is observed, which decreases somewhat with temperature, suggesting a semimetal conducting transport—the absolute values of the Seebeck coefficient increase with temperature. The resulting power factor showed the highest values near room temperature and a somewhat decreasing trend as the temperature increased. Despite lower values of the Seebeck coefficient, the substantially enhanced power factor is due to the higher electrical conductivity of the thin film, superior to that reported previously. This precursor study demonstrates promising results for developing high-performance flexible thermoelectric devices via a simple and facile SILAR strategy.

show abstract

“…Tin diselenide (SnSe 2 ) is an n-type semiconductor with a suitable band gap energy of 1.59 eV . As SnSe 2 has strong light absorption and high carrier migration ability, , it has great potential for applications in the field of photocatalysis. , In addition, theoretical studies have predicted that SnSe 2 can be used as a promising material to construct Z-scheme heterojunctions for photocatalytic cracking of water .…”

Section: Introductionmentioning

confidence: 99%

Transient Metal Centers at the Covalent Heterointerface Favor Photocatalytic Hydrogen Evolution

Zhang

Cheng

Xing

et al. 2023

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Semiconductor heterostructures effectively promote the transfer and separation of interfacial photoinduced charges for the photocatalytic process. Herein, we constructed a direct Z-scheme SnSe2/CdS heterojunction photocatalyst. N-type SnSe2 semiconductors are suitable candidate materials for oxidation half-reactions in Z-scheme heterojunctions. The intimate atomic-level interfacial contact through Cd–Se bonds provides a better interfacial charge transport channel for the photoinduced charges. Moreover, the transient Sn4+/Sn0 centers caused by the photoredox process boost the interfacial charge transport/separation at the interface. Besides, the presence of S vacancies acting as electron enrichment centers further enhances the redox ability for hydrogen production. Therefore, the SnSe2/CdS heterostructure showed a superior visible-light photocatalytic H2-production activity of 13.6 mmol·g–1·h–1 using ascorbic acid as a sacrificial agent, which is 9.7 times higher than that of pristine CdS. The apparent quantum yield reaches 10.5% at λ = 420 nm. This work provides a useful way to improve charge transfer in the Z-scheme heterojunction photocatalyst for hydrogen production.

show abstract

A study on the role of surfactant on the layered growth of SnSe2 for electrical applications

Cited by 9 publications

References 28 publications

Visible-to-near-infrared photodetectors based on SnS/SnSe₂ and SnSe/SnSe₂ p−n heterostructures with a fast response speed and high normalized detectivity

Visible-to-near-infrared photodetectors based on SnS/SnSe₂ and SnSe/SnSe₂ p−n heterostructures with a fast response speed and high normalized detectivity

Synthesis, Characterization and Power Factor Estimation of SnSe Thin Film for Energy Harvesting Applications

Transient Metal Centers at the Covalent Heterointerface Favor Photocatalytic Hydrogen Evolution

Contact Info

Product

Resources

About

A study on the role of surfactant on the layered growth of SnSe2 for electrical applications

Cited by 9 publications

References 28 publications

Visible-to-near-infrared photodetectors based on SnS/SnSe2 and SnSe/SnSe2 p−n heterostructures with a fast response speed and high normalized detectivity

Visible-to-near-infrared photodetectors based on SnS/SnSe2 and SnSe/SnSe2 p−n heterostructures with a fast response speed and high normalized detectivity

Synthesis, Characterization and Power Factor Estimation of SnSe Thin Film for Energy Harvesting Applications

Transient Metal Centers at the Covalent Heterointerface Favor Photocatalytic Hydrogen Evolution

Contact Info

Product

Resources

About

Visible-to-near-infrared photodetectors based on SnS/SnSe₂ and SnSe/SnSe₂ p−n heterostructures with a fast response speed and high normalized detectivity

Visible-to-near-infrared photodetectors based on SnS/SnSe₂ and SnSe/SnSe₂ p−n heterostructures with a fast response speed and high normalized detectivity