A study on the photoconductivity of a set of horizontal Bridgman semi-insulating GaAs ingots

Spectral photoconductivity curves of SI GaAs:Cr crystals are measured in the extrinsic region using the two light sources method; high intensity monochromatic illumination ensures steady‐state population of levels; and probe light of low intensity serves to measure corresponding photoconductivity curves. The set of obtained curves is decomposed into elementary contributions using the minimization program MINUIT. The obtained photoionization cross‐sections are compared with those from absorption measurements and interpreted as transitions involving Cr2+, Cr3+, and Cr4+ ions. The influence of interaction among impurities and of internal electric field on the photoionization cross‐section is discussed.

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The EL2 Defect in GaAs: Some Recent Developments

Manasreh

Fischer

Mitchel

1989

Physica Status Solidi (b)

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A study on the photoconductivity of a set of horizontal Bridgman semi-insulating GaAs ingots

Cited by 16 publications

References 29 publications

Photoconductivity Properties of Vanadium Doped Bulk GaAs

Photoconductivity Properties of Vanadium Doped Bulk GaAs

The study of impurity levels in LEC semi-insulating GaAs:Cr samples by two-source photoconductivity measurements

The EL2 Defect in GaAs: Some Recent Developments

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