A study on the microstructural and chemical evolution of In–Ga–Zn–O sol–gel films and the effects on the electrical properties

Jeon, Haseok; Song, Jury; Na, Sekwon; Moon, Miran; Lim, Ji‐Eun; Joo, Jinho; Jung, Donggun; Kim, Hyungsub; Noh, Jinsoo; Lee, Hoo-Jeong

doi:10.1016/j.tsf.2013.05.110

Cited by 26 publications

(17 citation statements)

References 13 publications

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“…8(b), we plot the total concentration (kT exp D exp ) of the exponential tail states below the mobility edge for all the devices. We can observe that the exponential tail state densities (or the DoS at the mobility edge) decreased from ∼2×10 12 /cm 2 to ∼4×10 11 /cm 2 as the processing temperature of the devices was increased from 300 to 500 0 C. This result can be attributed to the efficient removal of solvents and organic residues at higher processing temperatures [43]- [46].…”

Section: Mobility Fits and Parameter Extractionmentioning

confidence: 82%

Influence of Thermal Post-deposition on Trap States in Sol-gel Indium Zinc Oxide TFTs

Chatterjee¹,

Weidling²,

Ruden³

et al. 2021

Preprint

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<div>Metal oxides have been investigated for use in displays and wearable electronics, owing to their high mobility in the amorphous state. In solution-processed oxide thin-film transistors, post-deposition thermal processing significantly change the film’s transport properties, and is essential for high-performance devices. The mobility, bias stability and trapping-detrapping related hysteresis are improved with higher processing temperatures, which is generally attributed to decreased localized states which act as electron traps. Here we develop a model to validate that post-deposition processing indeed changes the density and properties of the localized states. We obtain good agreement between this model and the experimental data measured from sol-gel indium zinc oxide TFTs. When the processing temperature increases from 300 to 500 <sup>0</sup>C, the model indicates that the trap state density in the bulk semiconductor and at the interface decrease by a factor of 5 and a factor of 3, respectively. Furthermore, the localized states become shallower, and the band mobility increases at higher processing temperatures.</div>

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Section: Mobility Fits and Parameter Extractionmentioning

confidence: 82%

Influence of Thermal Post-deposition on Trap States in Sol-gel Indium Zinc Oxide TFTs

Chatterjee¹,

Weidling²,

Ruden³

et al. 2021

Preprint

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“…Moreover, the mixing of metal cations is generally preferred to achieve stable amorphous phase. [39][40][41] In this study, we used a fixed compositional ratio of La:Zr = 1:1 to avoid sol-gel precursor instability and achieve maximized mixing of heterogenous metal cations. Accordingly, further investigation of Li incorporation was conducted to achieve high ionic conductivity with higher Li content.…”

Section: Resultsmentioning

confidence: 99%

Solution Processing of Lithium‐Rich Amorphous Li‐La‐Zr‐O Ion Conductor and Its Application for Cycling Durability Improvement of LiCoO₂ Cathode as Coating Layer

Bui

Yun

Darko

et al. 2021

Adv Materials Inter

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vehicles, and even grid scale energy storage applications with high energy, high output voltage, low self-discharge, and long cycling life. [1] Currently, the safe operation of LIBs relies on the physical separation of cathode and anode electrodes using polymer separators, which are immersed in lithium salt solution with carbonate solvents for transporting lithium ion. For fast lithium-ion transfer, high ionic conductivity and Li-ion diffusion coefficient of electrolyte are essential. During the last few decades, through intensive investigations, there has been significant progress in the performance of liquid electrolytes because of their promising features, such as high bulk ionic conductivity and excellent interface with solid electrodes surfaces wetting. [2] However, there are some limitations, such as narrow ion selectivity, [3] high flammability with low thermal stability, which can lead to an explosion if overcharged or short circuits occur. [4] To overcome the critical drawbacks of liquid electrolytes, solid-state electrolytes have been intensively investigated since the 1990s. The solid-state electrolytes provide several advantages in LIB, such as high simplicity of design, nonflammability, diverse ionic selectivity, and stability with lithium metal. [5,6] Recently, there have been significant improvements on high ionic conductivity solid electrolyte with metal oxides and metal sulfides. [7-10] Particularly, oxide-based solid electrolyte possesses appropriate chemical stability, high thermal stability, [11-13] and wide electrochemical window, [4,14,15] which could potentially resolve the safety issues in LIBs. [16,17] Among them, garnet-type of Li 7 La 3 Zr 2 O 12 (LLZO) has been intensively investigated as a promising solid electrolyte with high ionic conductivity (≈10 −3 S cm −1) at room temperature and superior electrochemical stability. [18-22] However, there are several remaining issues, such as low ionic conductivity at grain boundary, anisotropic ion transport, high processing temperature, and limited composition tunability. Amorphous materials could be an alternative to resolve these issues. For example, the amorphous Li-La-Zr-O thin films, based on primitive stoichiometric ratio of LLZO, have demonstrated the advantages of amorphous materials, such as the lack of grain boundary, intimate contact with electrode materials, and low processing temperature. [23-27] Lithium-rich amorphous Li-La-Zr-O (a-Li-La-Zr-O) electrolyte is successfully synthesized using sol-gel processing method. With unlimited compositions of the amorphous structure, lithium-rich compositions are systematically investigated to determine optimal composition and optimized processing conditions of a-Li-La-Zr-O coatings. There is an improvement in ionic conductivity of a-Li-La-Zr-O with Li content increasing, specifically from 3.0 × 10 −8 S cm −1 (Li 8 La 2 Zr 2 O 11) to 1.18 × 10 −6 S cm −1 (Li 18 La 2 Zr 2 O 16), thereby resulting in low activation energy. The high-ionic-conductivity a-Li-La-Zr-O is implemented as an artificial s...

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“…To determine the mechanism underlying the variation in the performances obtained with Ar and O 2 plasma and Ar/O 2 mixed-plasma treatments, we conducted Xray photoelectron spectroscopy (XPS) studies [11,12]. The XPS spectra were obtained after etching 5 nm of the a-IGZO films to avoid any contribution of oxygen, carbon, and water molecules adsorbed on the surface of a-IGZO.…”

Section: Resultsmentioning

confidence: 99%

“…Meanwhile, the argon radicals were less effective for the removal of carbon-related contamination. The residual carbon could act as obstacles, trap sites, for charge-carrier accumulation and transport [8,[12][13][14]. In table 1, the a-IGZO TFTs that have higher electrical performances are seem to have lower values of N t,max , D it,max , and the hysteresis voltage.…”

Section: Resultsmentioning

confidence: 99%

Improved performance of solution-processed a-InGaZnO thin-film transistors due to Ar/O2 mixed-plasma treatment

Kim

Hwang

et al. 2014

Journal of the Korean Physical Society

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We investigated the effects of Ar and O2 treatment and of Ar/O2 mixedplasma treatment on the electrical characteristics of solution-processed amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The electrical performance and the instability of a-IGZO TFTs were significantly improved by the plasma treatments. The plasma treatments reduced the carbon-based residual contamination that acted as possible trap sites. In particular, the O2-plasma treatment produced a significant improvement in the reliability of a-IGZO TFTs when compared with the Ar-plasma-treated device, owing to the elimination of residual carbon in the active channel of the solution-processed a-IGZO. However, the optimized improvement of the solution-processed a-IGZO TFT under a gate bias stress was obtained for the device treated with an Ar/O2 mixed-gas plasma. The plasma treatment in the Ar/O2-mixed ambience remarkably enhanced not only the reliability but also the electrical performance of the a-IGZO TFT; the on/off-current ratio, the field-effect mobility, and the subthreshold slope were 6.78 × 10 7 , 1.24 cm 2 /V·s, and 513 mV/dec, respectively.

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A study on the microstructural and chemical evolution of In–Ga–Zn–O sol–gel films and the effects on the electrical properties

Cited by 26 publications

References 13 publications

Influence of Thermal Post-deposition on Trap States in Sol-gel Indium Zinc Oxide TFTs

Influence of Thermal Post-deposition on Trap States in Sol-gel Indium Zinc Oxide TFTs

Solution Processing of Lithium‐Rich Amorphous Li‐La‐Zr‐O Ion Conductor and Its Application for Cycling Durability Improvement of LiCoO₂ Cathode as Coating Layer

Improved performance of solution-processed a-InGaZnO thin-film transistors due to Ar/O2 mixed-plasma treatment

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A study on the microstructural and chemical evolution of In–Ga–Zn–O sol–gel films and the effects on the electrical properties

Cited by 26 publications

References 13 publications

Influence of Thermal Post-deposition on Trap States in Sol-gel Indium Zinc Oxide TFTs

Influence of Thermal Post-deposition on Trap States in Sol-gel Indium Zinc Oxide TFTs

Solution Processing of Lithium‐Rich Amorphous Li‐La‐Zr‐O Ion Conductor and Its Application for Cycling Durability Improvement of LiCoO2 Cathode as Coating Layer

Improved performance of solution-processed a-InGaZnO thin-film transistors due to Ar/O2 mixed-plasma treatment

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Solution Processing of Lithium‐Rich Amorphous Li‐La‐Zr‐O Ion Conductor and Its Application for Cycling Durability Improvement of LiCoO₂ Cathode as Coating Layer