A study on the effect of oxygen implants in CuInSe2 by photoacoustic spectroscopy

Abstract

This paper presents the results of an analysis on defect states changes following the irradiation of oxygen in CuInSe2 single crystals by using photoacoustic spectroscopy. CuInSe2 samples, n‐type conducting, of high quality grown by using the vertical Bridgman technique have been implanted at ambient temperature with O+ with the energy of 40 keV with doses of 1015 and 1016 ions/cm2. A theoretical model based on two‐layer samples has been used to extract the absorption spectrum of only the implanted layer from that of the bulk. Oxygen is found to create a shallow defect at 31meV and a deep one at 256±2 meV. It has also led to the disappearance of some other defect levels originally detected in the samples prior to implantation.

Effect of Neon Ion Implantation on the Electrical Propertie of CIGS Photovoltaic Cells

“…Oxygen ion implantation into CuInSe2 crystals revealed some concentration changes of already existing defects and the creation of new defects. These defects influence the photoelectric properties of the material (Zegadi, 2015). The energy was 40 keV, ion doses were 10 +15 cm -2 and 10 +16 cm -2 the obtained mean projected range Rp was 744 Å, the mean straggling range Rp was 364 Å.…”