A Study on the Chemistry of Epitaxial Ti&lt;sub&gt;3&lt;/sub&gt;SiC&lt;sub&gt;2&lt;/sub&gt; Formation on 4H-SiC Using Al-Ti Annealing

Abi-Tannous, Tony; Soueidan, Maher; Ferro, Gabriel; Lazar, Mihai; Toury, Bérangère; Beaufort, M. F.; Barbot, J. F.; Penuelas, Jose; Planson, Dominique

doi:10.4028/www.scientific.net/msf.821-823.432

Cited by 3 publications

(2 citation statements)

References 9 publications

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“…For ohmic contact formation, high-temperature annealing was performed in a rapid thermal annealing (RTA) furnace under argon at atmospheric pressure with advanced backing steps (three times pumping followed by argon filling) before the annealing in order to decrease the residual oxygen concentration in the RTA chamber. The beneficial effect of such baking steps is described in [18] and [19]. The annealing temperature was varied from 900°C to 1200°C for a 10 min plateau and a heating rate of 20°C/s.…”

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A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti₃SiC₂Phase

Abi-Tannous

Soueidan

Ferro

et al. 2016

IEEE Trans. Electron Devices

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In this paper, the electrical properties of Ti 3 SiC 2 -based ohmic contacts formed on p-type 4H-SiC were studied. The growth of Ti 3 SiC 2 thin films were studied onto 4H-SiC substrates by thermal annealing of Ti-Al layers deposited by magnetron sputtering. In this study, we varied the concentrations of Ti and Al (Ti 20 Al 80 , Ti 30 Al 70 , Ti 50 Al 50 , and Ti), and the annealing temperature from 900°C to 1200°C for each concentration. X-ray diffraction and transmission electron microscopy analyzes were performed on the samples to determine the microstructure of the annealed layers and to further investigate the compounds formed after annealing. Using the transfer length method structures, the specific contact resistance (SCR) at room temperature of all contacts was measured. The temperature dependence up to 600°C of the SCR of the best contacts was studied to understand the current mechanisms at the Ti 3 SiC 2 /SiC interface. The experimental results are in agreement with the thermionic field emission theory. With this model, the barrier height of the contact varies between 0.71 and 0.85 eV. Finally, ageing tests showed that Ti3SiC2-based contacts were stable and reliable up to 400 h at 600°C under Ar.Index Terms-Ohmic contact, silicon carbide (SiC), thermionic field emission (TFE), Ti-Al alloy, Ti 3 SiC 2 .

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confidence: 99%

A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti₃SiC₂Phase

Abi-Tannous

Soueidan

Ferro

et al. 2016

IEEE Trans. Electron Devices

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“…Several works have been reported on p‐type doped SiC, where metal layers based on Ti and Al are typically subjected to thermal treatments above 800 °C in order to obtain Ohmic contacts . In the contact formation, the role of the Ti 3 SiC 2 phase is continuously under discussion . However, these Al‐containing systems exhibit often of a poor morphology due to the tendency of Al to ball‐up during annealing .…”

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Ti/Al-based contacts to p-type SiC and GaN for power device applications

Roccaforte

Vivona

Greco

et al. 2016

Phys. Status Solidi A

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Metal contacts (Schottky or Ohmic) to p-type wide band gap (WBG) semiconductors SiC and GaN are important for power devices technologies. This work reports on the properties of Ti/Al-based contacts to p-type 4H-SiC and p-type GaN, monitored using different techniques and test-patterns. In particular, in the case of p-type SiC, Ti/Al and Ti/Al/W contacts showed a superior Ohmic behavior after annealing at 900-1100 8C (with r c % 1.5-6 Â 10 À4 Vcm 2 ), attributed to the formation of Ti-and Al-containing phases at the interface and in the stack. Due to the lower r c with respect to Ni-based contacts, Ti/Al allowed a reduction of the forward voltage drop in 4H-SiC p-n junctions. On the other hand, in the case of p-type GaN, Ti/Al contacts exhibited a higher barrier height (2.08 eV) with respect to Ni contacts. Hence, they can be promising as Schottky gates in high electron mobility transistors (HEMTs). However, temperature-dependent electrical measurements revealed a decrease of the barrier height down to 1.60 eV upon annealing at 800 8C, with an increase of the leakage current in test-diodes. This result provided an important indication for the practical use of Ti/Al gate electrodes for the fabrication of normally off HEMTs with a p-GaN gate.

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Evolution of the Electrical and Structural Properties of Ti/Al/W Contacts to p-Type Implanted 4H-SiC upon Thermal Annealing

Vivona

Greco

Nigro

et al. 2015

MSF

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The mechanism of Ohmic contacts formation to p-type SiC is a fundamental and technological concern continuously under debate. Typically, Ti/Al-based contacts are a good choice for Ohmic contacts to p-type SiC, even though some aspects strictly related to the specific nature of Al (susceptibility to oxidation, low melting temperature, etc.) remain to be optimized. In this work, the evolution of the electrical properties of a Ti/Al/W multiple-layer contact has been studied by TLM characterization and correlated to the changes in the morphology and microstructure upon thermal annealing. The formation of an Ohmic contact has been observed after a thermal annealing at 1100°C, discussing the possible reasons determining the transition to an Ohmic behavior.

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A Study on the Chemistry of Epitaxial Ti<sub>3</sub>SiC<sub>2</sub> Formation on 4H-SiC Using Al-Ti Annealing

Cited by 3 publications

References 9 publications

A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti₃SiC₂Phase

A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti₃SiC₂Phase

Ti/Al-based contacts to p-type SiC and GaN for power device applications

Evolution of the Electrical and Structural Properties of Ti/Al/W Contacts to p-Type Implanted 4H-SiC upon Thermal Annealing

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A Study on the Chemistry of Epitaxial Ti<sub>3</sub>SiC<sub>2</sub> Formation on 4H-SiC Using Al-Ti Annealing

Cited by 3 publications

References 9 publications

A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti3SiC2Phase

A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti3SiC2Phase

Ti/Al-based contacts to p-type SiC and GaN for power device applications

Evolution of the Electrical and Structural Properties of Ti/Al/W Contacts to p-Type Implanted 4H-SiC upon Thermal Annealing

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A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti₃SiC₂Phase

A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti₃SiC₂Phase