A study on structural formation and optical property of wide band-gap Be0.2Zn0.8O layers grown by RF magnetron co-sputtering system

Electro-optic effect in GaN/Al0.15 Ga0.85N single quantum wells for optical switch

“…Using the density-matrix formalism, the secondharmonic generation (SHG) susceptibility of the double frequency 2 in a bulk material or quantum confined systems by an incident optical beam with the frequency . Assuming a monochromatic incident electromagnetic field E(t) = E exp(−iωt) + E * exp(iωt) is applied to a system, the polarization response is written as [20,21].…”

“…Also, IBTs in nitride semiconductor QWs have been the subject of extensive researches for their extremely large oscillator strengths and relatively narrow line widths, and are used in a variety of optoelectronic devices like QW infrared lasers [16,17], switches and MQW electrooptical modulators [18]. Above all, nitride-semiconductor heterostructures have several advantages, namely: (1) the absorption recovery time is considerably lower than 1 ps, (2) a wide range of wavelengths is available with a less-complicated quantum structure, (3) the homogeneous line width is sufficiently broad due to the short dephasing time, (4) two-photon absorption does not interfere with the saturable absorption due to the wide band-gap [19,20].…”