A study on packaging design of SiC power module using near-field magnetic scanning techniques

Ibuchi, Takaaki; Masuda, Eisuke; Funaki, Tsuyoshi; Otake, Hirotaka; Miyazaki, Tetsuya; Kanetake, Yasuo; Nakamura, Takashi

doi:10.1109/iwipp.2017.7936770

Cited by 11 publications

(6 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The authors of [10] proposed the integration of an additional snubber ceramic capacitor on the direct bonded copper (DBC) substrate of the power module. This effectively reduces the size of the commutation cell and thereby the effective parasitic inductance.…”

Section: A State Of the Artmentioning

confidence: 99%

See 1 more Smart Citation

Analysis of the Zero Overvoltage Switching Phenomenon

2022

View full text Add to dashboard Cite

In common understanding, the fast switching speed of wide-bandgap devices leads to high overvoltage and oscillations, if no countermeasures are taken. Those countermeasures were introduced in the past, and include methods such as build-in gate resistors or low-inductive power modules. There is, however, a physical limit for reducing the parasitic inductance of the commutation cell. This is one of the reasons why the full potential of wide-bandgap devices cannot be entirely utilized. In contrast, the Zero Overvoltage Switching (ZOS) phenomenon can be used to theoretically unleash unlimited switching speed with no switching losses and voltage overshoots. This method triggers the inherent parasitic oscillating elements of a commutation cell to perform an ideal current commutation. This article investigates the physical effects and usage of this technology in real-world applications. The model of an ideal commutation cell is adapted to reality by introducing damping factors as well as the nonlinear behaviour of the parasitic capacitances. An extended ZOS area is presented, including the parasitic capacitances of two wide-bandgap devices. It allows today's silicon carbide power modules to make use of the ZOS technology and perform at different power levels. Measurements with a commercially available power module were taken to verify the theoretical analysis and the derived equations.

show abstract

Section: A State Of the Artmentioning

confidence: 99%

“…A measurement methodology was proposed to visualize the current distribution within the power module and the actual influence of the snubber capacitors. Also, article [10] provides a comparison of a power module with and without integrated snubber capacitors. In [11] ceramic capacitors were embedded into a power module.…”

Section: A State Of the Artmentioning

confidence: 99%

Analysis of the Zero Overvoltage Switching Phenomenon

2022

View full text Add to dashboard Cite

show abstract

“…Many papers and technical reports mention that it is important to identify parasitic inductance around the power devices in the circuit [3][4][5][6]. The authors have evaluated parasitic inductance of interconnect wiring and visualized high-frequency noise current distribution in 2-D structure SiC half-bridge power module [7].…”

Section: Introductionmentioning

confidence: 99%

A Study on Equivalent Circuit Modeling of Wiring Inductance in SiC Power Module for Predicting Conducted EMI of Power Converter

Kyotani

Ibuchi

Funaki

et al. 2020

2020 IEEE 11th International Symposium on Power Electronics for Distributed Generation Systems (PEDG)

Self Cite

View full text Add to dashboard Cite

Silicon Carbide (SiC) power semiconductor devices achieve low switching losses with fast switching operation and miniaturized power conversion circuit. SiC power module for high voltage and large current is subject to large di/dt and dv/dt in switching transient. Large di/dt induces surge voltage and ringing oscillation by interacting with circuit parasitic inductance and capacitance. These are fatal factors for electromagnetic interference (EMI) of the circuit. This report studies modeling of parasitic inductance in SiC power module based on threedimensional (3-D) electromagnetic analysis to realize low EMI design for power conversion circuit. The developed Partial Equivalent Element Circuit (PEEC) model of SiC power module is applied to circuit analysis. The simulated time response of voltage/current in switching operation and frequency spectrum of the conducted EMI for the tested converter agree with the measurement result well.

show abstract

“…The other solution is the integration of DC capacitors inside the power module. This configuration provides a low loop inductance for the current commutation loop and thus minimizes the DC-side parasitic inductance [10,11]. A few recent studies reporting on integrating capacitors in a SiC MOSFET module mainly focused on module design and electrical characterization [12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Electrical Performance and Reliability Characterization of a SiC MOSFET Power Module With Embedded Decoupling Capacitors

Yang

Dai

et al. 2018

IEEE Trans. Power Electron.

View full text Add to dashboard Cite

Integration of decoupling capacitors in SiC MOSFET modules is an advanced solution to mitigate the effect of parasitic inductance induced by module assembly interconnects. In this paper, the switching transient behavior is reported for a 1.2kV SiC MOSFET module with embedded DC-link capacitors. It shows faster switching transition and less overshoot voltage compared to a module using an identical package but without capacitors. Active power cycling and passive temperature cycling are carried out for package reliability characterization and comparisons are made with commercial Si and SiC power modules. Scanning acoustic microscopy images and thermal structure functions are presented to quantify the effects of package degradation. The results demonstrate that the SiC modules with embedded capacitors have similar reliability performance to commercial modules and that the reliability is not adversely affected by the presence of the decoupling capacitors.

show abstract

A study on packaging design of SiC power module using near-field magnetic scanning techniques

Cited by 11 publications

References 6 publications

Analysis of the Zero Overvoltage Switching Phenomenon

Analysis of the Zero Overvoltage Switching Phenomenon

A Study on Equivalent Circuit Modeling of Wiring Inductance in SiC Power Module for Predicting Conducted EMI of Power Converter

Electrical Performance and Reliability Characterization of a SiC MOSFET Power Module With Embedded Decoupling Capacitors

Contact Info

Product

Resources

About