2012
DOI: 10.1016/j.electacta.2012.07.077
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A study on molybdenum sulphoselenide (MoS Se2−, 0 ≤x≤ 2) thin films: Growth from solution and its properties

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Cited by 27 publications
(37 citation statements)
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“…However, the effect of the MSSe layer formed at the back electrode on the PCE is still argued. [35][36][37] In order to understand mechanism of effect of selenization temperature and time on the PCE, three solar cells with structure of SLG/Mo/CZTSSe/CdS/i-ZnO/indium tin oxide (ITO)/Al grid were prepared by using the CZTSSe absorber layers prepared at 530 °C in the selenization time of 5, 15 and 30 min, respectively, and were investigated by measurement of their current density(J)-voltage(V) curves under AM 1.5G illumination. Fig.…”
Section: / 34mentioning
confidence: 98%
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“…However, the effect of the MSSe layer formed at the back electrode on the PCE is still argued. [35][36][37] In order to understand mechanism of effect of selenization temperature and time on the PCE, three solar cells with structure of SLG/Mo/CZTSSe/CdS/i-ZnO/indium tin oxide (ITO)/Al grid were prepared by using the CZTSSe absorber layers prepared at 530 °C in the selenization time of 5, 15 and 30 min, respectively, and were investigated by measurement of their current density(J)-voltage(V) curves under AM 1.5G illumination. Fig.…”
Section: / 34mentioning
confidence: 98%
“…preventing phase segregation, and increment of grain size and compactness of the 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 4/ 34 properties of CZTSSe-based solar cell is still argued up to now. [35][36][37] In this work, we prepare CZTSSe films by annealing CZTS precursor films deposited on Mo coated glass under selenium vapor; and systematically investigate the changes of structure and crystal quality of the CZTSSe films and CZTSSe/Mo interfaces. Our work demonstrates that the MSSe layer has smaller effect on the R s , but it has larger influence on the G sh , n and J 0 .…”
Section: Introductionmentioning
confidence: 99%
“…Transition metal chalcogenide are materials of semiconductors, which are capable to be used as an efficient photovoltaic material [2][3][4]. From the previous research, transition metal chalcogenides NiX2 (X= Se, S and Te) and MoX2 (X=Se, S and Te) have been showing a good result in term of optical and semiconducting properties as a new thin film material for solar energy in effort to replace the conventional method [5][6][7][8][9][10]. Transition metal chalcogenide thin films preparation by electrochemical methods is attracting to be given a special attention as it is relatively affordable, simple and convenient for large area deposition [5].…”
Section: Introductionmentioning
confidence: 99%
“…Good quality films can be potentially produced by changing the deposition parameters; for example bath temperature, pH of the bath, concentration of the solution and deposition time. The thin films are prepared on conducting tin oxide coated glass substrates as well as silicon and metal substrates [6][7][8][9][10].…”
Section: Introductionmentioning
confidence: 99%
“…Ability of large-scale deposition in complex shape, minimum waste of component and easy monitoring are among the advantages offered by this method (Shariza & Anand 2011;Anand 2009). Depending upon the type of additive, the film properties such as optical absorption, thermal stability, structure, morphology and adhesion onto the substrate has been studied (Junlabhut et al 2013;Tayal et al 2013;Vajargah et al 2013;Anand & Shariza 2012). Solar cell is one of the promising alternative green energy sources that can provide free electricity when sunlight is converted.…”
Section: Introductionmentioning
confidence: 99%