A study on maskless selective growth of Mg-doping p-type GaAs using low-energy focused ion beam

Kim, E.M.; Gotoh, Tetsuya; Fukai, Misato; Suzuki, Tetsuhito; Pak, Kangsa

doi:10.1016/j.jcrysgro.2006.11.069

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2007

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“…Another type of ion beam, namely the focused ion beam (FIB) of Ga + , has also been employed to grow and dope [19], tailor [20][21][22], and synthesize and self-assemble nanostructures [8,[22][23][24][25][26][27] on the GaAs(001) surface. It is indeed possible to create arrays of self-assembled quantum dots [8,[23][24][25][26] on GaAs(001) by FIB nanomachining.…”

Section: Introductionmentioning

confidence: 99%

Real-time observation of FIB-created dots and ripples on GaAs

2007

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We report a phenomenological study of Ga dots and ripples created by a focused ion beam (FIB) on the GaAs(001) surface. Real-time observation of dot diffusion and ripple formation was made possible by recording FIB movies. In the case of FIB irradiation with a 40 nA current of Ga(+) ions accelerated under 40 kV with an incidence angle of θ = 30°, increasing ion dose gives rise to three different regimes. In Regime 1, dots with lateral sizes in the range 50-460 nm are formed. Dots diffuse under continuous sputtering. In Regime 2, dots self-assemble into Bradley and Harper (BH) type ripples with a pseudo-period of λ = 1150 ± 25 nm. In Regime 3, ripples are eroded and the surface topology evolves into microplanes. In the case of normal incidence, FIB sputtering leads only to the formation of dots, without surface rippling.

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