A study on low cost-high conducting fluorine and antimony-doped tin oxide thin films

Elangovan, E.; Ramamurthi, K.

doi:10.1016/j.apsusc.2004.11.074

Cited by 229 publications

(153 citation statements)

References 31 publications

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“…This is because the energy gap between the valence band and the lowest empty state in the conduction band is found to increase due to the filling of low lying energy levels in the conduction that is caused by the increase in the carrier concentration (Burstein-Moss effect) [37]. The shift in the band-gap can also be related to the variation in the mean crystallite size, the internal stress or due to the free carrier concentration [40]. Figure 7a,b shows the surface area and the cross-section SEM morphologies of SnO2:F2 film, respectively.…”

Section: Optical Propertiesmentioning

confidence: 99%

Electrical and Optical Properties of Fluorine Doped Tin Oxide Thin Films Prepared by Magnetron Sputtering

et al. 2014

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Fluorine doped tin oxide (FTO) coatings have been prepared using the mid-frequency pulsed DC closed field unbalanced magnetron sputtering technique in an Ar/O2 atmosphere using blends of tin oxide and tin fluoride powder formed into targets. FTO coatings were deposited with a thickness of 400 nm on glass substrates. No post-deposition annealing treatments were carried out. The effects of the chemical composition on the structural (phase, grain size), optical (transmission, optical band-gap) and electrical (resistivity, charge carrier, mobility) properties of the thin films were investigated. Depositing FTO by magnetron sputtering is an environmentally friendly technique and the use of loosely packed blended powder targets gives an efficient means of screening candidate compositions, which also provides a low cost operation. The best film characteristics were achieved using a mass ratio of 12% SnF2 to 88% SnO2 in the target. The thin film produced was polycrystalline with a tetragonal crystal structure. The optimized conditions resulted in a thin film with average visible transmittance of 83% and optical band-gap of 3.80 eV, resistivity of 6.71 × 10

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Section: Optical Propertiesmentioning

confidence: 99%

Electrical and Optical Properties of Fluorine Doped Tin Oxide Thin Films Prepared by Magnetron Sputtering

et al. 2014

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“…So far, tin-doped indium oxide (ITO) is the most common TCO owing to its superior electrical conductivity and optical transmission. However, the success of ITO is limited by the high cost, toxicity and scarcity of indium [2][3][4] . In search of alternative materials, ZnO has attracted much attention because of its relatively low cost, wide band gap of 3.37 eV, large exciton binding energy (60 meV) and distinctive surface effect (1.53 eV surface band bending) 5 .…”

Section: Introductionmentioning

confidence: 99%

Optical and Electrical Properties of (002)-Oriented ZnO Films Prepared on Amorphous Substrates by Sol-Gel Spin-Coating

et al. 2016

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Zinc oxide (ZnO) films were prepared on amorphous quartz substrates by sol-gel spin-coating using Zn(CH 3 COO) 2 •2H 2 O precursor. Isopropanol, ethanol and 2-methoxyethanol were used as solvents. The film drying temperature was kept constant at 200 ºC and the annealing temperature was varied from 400 to 800 ºC. Highly transparent and (002)-oriented hexagonal wurtzite-type ZnO films were obtained using isopropanol solvent. The ZnO films prepared at T anneal = 600 ºC showed the highest (002) preferential orientation, however it was not the significant feature to achieve low resistivity. The uniform and (002)-oriented ZnO films prepared at T anneal = 400 ºC display the highest transmittance (>93% in the visible region) and the lowest resistivity (7.1 Ω•cm).

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“…Doping with foreign impurities is an important method to enhance the properties of the nanoparticles in desirable and controllable ways. The most favored dopants are antimony which substitutes the tin cations and fluorine via substituting the oxygen atoms [9].…”

Section: Introductionmentioning

confidence: 99%

Influence of fluorine doping on the microstructure, optical and electrical properties of SnO2 nanoparticles

Haddad

Ayadi

Mahdhi

et al. 2017

J Mater Sci: Mater Electron

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A study on low cost-high conducting fluorine and antimony-doped tin oxide thin films

Cited by 229 publications

References 31 publications

Electrical and Optical Properties of Fluorine Doped Tin Oxide Thin Films Prepared by Magnetron Sputtering

Electrical and Optical Properties of Fluorine Doped Tin Oxide Thin Films Prepared by Magnetron Sputtering

Optical and Electrical Properties of (002)-Oriented ZnO Films Prepared on Amorphous Substrates by Sol-Gel Spin-Coating

Influence of fluorine doping on the microstructure, optical and electrical properties of SnO2 nanoparticles

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