A Study on Ionization Damage Effects of Anode-Short MOS-Controlled Thyristor

Li, Lei; Li, Zehong; Chen, Xiao-Chi; Wu, Yuzhou; Zhang, Jinping; Ren, Min; Zhang, Chao; Pang, Yuanlong; Wu, Xiaoli

doi:10.1109/tns.2020.3012766

Cited by 8 publications

(1 citation statement)

References 37 publications

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“…The time dependence of the drop of the voltage across the emitter-base junction (∆V EB ) and the increase of the effective doping concentration in the collector (∆N eff ) is shown in figures 7(a) and (b), respectively, during 2.5 A cm −2 forward current injection on the same device. ∆V EB is extracted from the changes of normalized I C due to positive charge buildup in the base while ∆N eff is extracted from the leakage current of the base/collector junction under the assumption of a linear dependence of the leakage current drop on the decrease of the depletion layer, ∆J R ∝ ∆W D [48,49]. The correlated formation kinetics of the metastable defect is shown in figure 7(c) by measuring the growth of the H (228 K) peak in the DLTS spectra.…”

Section: The Evolution Of Normalized Currents ( Ib(0) Ib(t)mentioning

confidence: 99%

Metastable acceptors in boron doped silicon: evidence of the defects contributing to carrier induced degradation

Chen¹,

Li²,

Zhang³

et al. 2021

J. Phys. D: Appl. Phys.

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This work focuses on the recombination-enhanced reactions of boron related defects in compensated silicon and their impact on the electrical performance of silicon devices. Using deep level transient spectroscopy, we measured the defect spectra in the collector of 14 MeV fusion neutron irradiated p-n-p silicon transistors during forward current injection, as well as the corresponding degradation kinetics of both current gain and leakage current on the same device. Two hole traps at E c + 0.43 eV and E c + 0.53 eV are proved to be acceptors in the lower half of the gap with significant recombination enhanced effects. These metastabe acceptors degrade the current gain by changing the space charge distribution in the p-n-p structure and are linked with carrier-induced boron-oxygen complexes responsible for the minority-carrier lifetime degradation of silicon photovoltaics.

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Section: The Evolution Of Normalized Currents ( Ib(0) Ib(t)mentioning

confidence: 99%