A study on free-standing 3C-SiC bipolar power diodes

Abstract

A low p-n built-in potential (1.75 V) makes 3C-SiC an attractive choice for medium voltage bipolar or charge balanced devices. Until recently, most 3C-SiC had been grown on Si, and power device fabrication had therefore been hindered by issues such as high defect density and limited processing temperature, while devices were necessarily limited to lateral structures. In this work, we present the fabrication and characterisation of a vertical PiN diode using bulk 3C-SiC material. A p-type ohmic contact was obtained on Al implanted regions with a specific contact resistance ~10 -3 Ω.cm 2 . The fabricated PiN diode has a low forward voltage drop of 2.7 V at 1000 A/cm 2 , and the on-off ratio at ±3 V is as high as 10 9 . An ideality factor of 1.83-1.99 was achieved, and a blocking voltage of ~110 V was observed using a singlezone junction termination design.

Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate

“…The heteroepitaxial growth of 3C-SiC offers many advantages such as low-cost, large-diameter and high-quality starting Si substrates as well as low epitaxial growth temperatures [3,4]. 3C-SiC is of particular importance to power electronics in the 600-1200 V range, as it has a low built-in voltage [5], which accounts for the low specific on-resistance (R on . sp ) losses and large 3C-SiC/SiO 2 barrier, which potentially support devices' reliability [6].…”

Ab initio calculation of carrier mobility in semiconductors including ionized-impurity scattering

“…For Si there is an abundance of experimental data and previous calculations to compare with. 3C-SiC, which is also referred to as cubic SiC or β-SiC in the literature, is considered a promising candidate for next-generation power electronics [40][41][42]. Several experimental data sets are available for carrier mobility in 3C-SiC, especially for ntype (N) doping and less so for p-type doping (Al).…”