2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) 2016
DOI: 10.1109/ipfa.2016.7564295
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A study on device robustness with integrated effects from low parts-per-billion level of metallic elements in wafer cleaning process chemicals

Kun Tan
1
,
P. L. Emily Liew
2
,
Chai Chin Chin
3
et al.
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Defect Density Reduction of Thin SiO2 MOSFET through Oxidation Pre-cleaning improvement – a Fast Wafer Level Reliability Monitoring

Kamaruddin1,
Soin
2
,
Veriven3
et al. 2019
2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)
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Defect Density Reduction of Thin SiO2 MOSFET through Oxidation Pre-cleaning improvement – a Fast Wafer Level Reliability Monitoring

Kamaruddin1,
Soin
2
,
Veriven3
et al. 2019
2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)
1
0
0
0
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Application of ICP-MS for incoming chemical quality control in wafer fabrication

Neo,
Yeo,
Loh
et al. 2023
2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
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