A study on CdCl2 activation of CBD-CdS films

Kumarage, W. G. C.; Wijesundera, R.P.; Seneviratne, V. A.; Jayalath, C.; Kaur, Navpreet; Comini, Elisabetta; Gunawardhana, Nanda; Dassanayake, B.S.

doi:10.1007/s10854-020-03886-7

Cited by 8 publications

(6 citation statements)

References 38 publications

(45 reference statements)

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“…The texture coefficient (TC) allows obtaining information related to the orientation of each peak in the randomly oriented sample. The TC of each peak ( hkl ) is calculated from GIXRD patterns, using the following expression , normalT normalC false( italichkl false) = I false( italichkl false) I 0 false( italichkl false) true( 1 N ∑ i = 1 N I false( italichkl false) I 0 ( hkl ) true) − 1 where I ( hkl ) is the intensity of the ( hkl ) diffraction peak from the sample under investigation; I 0 ( hkl ) is the intensity of the ( hkl ) plane on a standard sample taken from a powder diffraction file (PDF) card; and N is the number of diffraction peaks considered for the analysis. Texture coefficient evaluation was carried out considering the orientation planes (002) and (112) associated with GIXRD results for the rack system and step system (up).…”

Section: Resultsmentioning

confidence: 99%

Comprehensive Analysis of CdS Ultrathin Films Modified by the Substrate Position inside the Reactor Container Using the CBD Technique

Ruiz-Ortega,

Esquivel-Mendez,

Gonzalez-Trujillo

et al. 2023

ACS Omega

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The cadmium sulfide (CdS) n-type semiconductor is one of the most used as a window layer in thin-film solar cells, such as CdTe, CIS, CIGS, and CZTS. Optoelectronic properties are the most important characteristics for window materials. CdS thin films obtained using the chemical bath deposition technique (CBD) have been reported; however, large amounts of precursor solutions are used, which generate considerable amounts of toxic waste. The aim of this work is to reduce the amount of precursor solutions used for CdS growth; for this, it is necessary to consider an efficient position for the substrate inside the reactor container and at the same time allow obtaining CdS thin films with adequate physical properties to be applied in the photovoltaic solar cell development. CdS thin films were deposited on soda−lime/SnO 2 :F substrates (FTO) using the CBD technique; the substrates were placed in three different arrangements [rack system, step system (up), and step system (down)]. CdS samples with areas of 4 cm 2 and a thickness of 27−48 nm were obtained; the X-ray diffraction patterns show CdS thin films with different polycrystalline structures. The morphological measurements reveal different surface formations depending on the substrate position, and resistivity values of around 10 5 Ω*cm were measured. UV−vis spectra show transmittance values of around 45−94% in the visible region with band gap energy values of around 2.1−2.36 eV. The best physical properties of CdS thin films and an efficient CBD process were obtained when the FTO substrates were located near the bottom of the reactor container with the FTO side down, leading to an optimal configuration that allows reducing the amount of precursor solutions and in this way reduces the toxic waste generated. These results are important in the photovoltaic technology process and environmental impact.

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Section: Resultsmentioning

confidence: 99%

Comprehensive Analysis of CdS Ultrathin Films Modified by the Substrate Position inside the Reactor Container Using the CBD Technique

Ruiz-Ortega,

Esquivel-Mendez,

Gonzalez-Trujillo

et al. 2023

ACS Omega

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“…The band gap was calculated based on the Stern equation. This is a very useful method and has been reported by many scientists [56][57][58][59][60][61][62] .…”

Section: Resultsmentioning

confidence: 99%

Effect of pH on the Synthesis of Cobalt Selenide Films by SILAR Method

Soonmin

2021

Orient. J. Chem

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The successive ionic layer adsorption and reaction method or called SILAR method was used to produce cobalt selenide thin films for the first time. The deposition was carried out onto the substrate under different various pH values. The X-ray diffraction (XRD), field emission scanning electron microscope (FESEM) and ultraviolet visible spectrophotometer were used to investigate the structure, morphology and optical properties of thin films, respectively. The XRD patterns confirmed that the presence of cubic phase cobalt selenide thin films. The grain size increased with increasing the pH value from pH 2 to pH 4 based on the FESEM images. The band gap values are in the range of 2 eV to 2.5 eV.

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“…The fluorine doped tin oxide (FTO, Sigma-Aldrich, St. Louis, MO, USA) glass substrates were first washed with detergent and running de-ionized (DI) water before ultrasound sonication. Later, glass substrates were cleaned following a method described elsewhere [8,[15][16][17].…”

Section: Methodsmentioning

confidence: 99%

Enhancement of Photo-Electrical Properties of CdS Thin Films: Effect of N2 Purging and N2 Annealing

Sankalpa,

Kumarasinghe,

Dassanayake

et al. 2024

Electronic Materials

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The impact of N2 purging in the CdS deposition bath and subsequent N2 annealing is examined and contrasted with conventional CdS films, which were deposited without purging and annealed in ambient air. All films were fabricated using the chemical bath deposition method at a temperature of 80 °C on fluorine-doped tin oxide glass slides (FTO). N2 purged films were deposited by introducing nitrogen gas into the deposition bath throughout the CdS deposition process. Subsequently, both N2 purged and un-purged films underwent annealing at temperatures ranging from 100 to 500 °C for one hour, either in a nitrogen or ambient air environment. Photoelectrochemical (PEC) cell studies reveal that films subjected to both N2 purging and N2 annealing exhibit a notable enhancement of 37.5% and 27% in ISC (short-circuit current) and VOC (open-circuit voltage) values, accompanied by a 5% improvement in optical transmittance compared to conventional CdS thin films. The films annealed at 300 °C demonstrate the highest ISC, VOC, and VFB values, 55 μA, 0.475 V, and −675 mV, respectively. The improved optoelectrical properties in both N2-purged and N2-annealed films are attributed to their well-packed structure, enhanced interconnectivity, and a higher sulfur to cadmium ratio of 0.76 in the films.

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A study on CdCl2 activation of CBD-CdS films

Cited by 8 publications

References 38 publications

Comprehensive Analysis of CdS Ultrathin Films Modified by the Substrate Position inside the Reactor Container Using the CBD Technique

Comprehensive Analysis of CdS Ultrathin Films Modified by the Substrate Position inside the Reactor Container Using the CBD Technique

Effect of pH on the Synthesis of Cobalt Selenide Films by SILAR Method

Enhancement of Photo-Electrical Properties of CdS Thin Films: Effect of N2 Purging and N2 Annealing

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